NPFC - MIL-PRF-19500/700
TRANSISTOR, FIELD EFFECT, N-CHANNEL, SILICON, RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TYPES 2N7494U5, 2N7495U5, AND 2N7496U5, QUALITY LEVELS JANTXV AND JANS
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| Organization: | NPFC |
| Publication Date: | 20 January 2020 |
| Status: | active |
| Page Count: | 24 |
scope:
Scope.
This specification covers the performance requirements for a N-channel, enhancement-mode, MOSFET, radiation hardened (total dose and single event effects (SEE)), power transistor. These transistors include ratings for avalanche energy maximum rating (EAS) and maximum avalanche current (IAR). Two levels of product assurance are provided for each device type as specified in MIL-PRF-19500.
intended Use:
Semiconductors conforming to this specification are intended for original equipment design applications and logistic support of existing equipment.
Document History
MIL-PRF-19500/700
January 20, 2020
TRANSISTOR, FIELD EFFECT, N-CHANNEL, SILICON, RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TYPES 2N7494U5, 2N7495U5, AND 2N7496U5, QUALITY LEVELS JANTXV AND JANS
Scope.
This specification covers the performance requirements for a N-channel, enhancement-mode, MOSFET, radiation hardened (total dose and single event effects (SEE)), power transistor. These...
November 7, 2018
Semiconductor Device, Field Effect Radiation Hardened Transistor, N-Channel, Silicon, Types 2N7494U5, 2N7495U5, and 2N7496U5, JANTXVR, F, G, and H, and JANSR, F, G, and H
A description is not available for this item.
January 30, 2014
SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED TRANSISTOR, N-CHANNEL, SILICON, TYPES 2N7494U5, 2N7495U5, AND 2N7496U5, JANTXVR, F, G, AND H, AND JANSR, F, G, AND H
This specification covers the performance requirements for a N-channel, enhancement-mode, MOSFET, radiation hardened, power transistor. Two levels of product assurance are provided for each device...
May 3, 2011
SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTOR, N-CHANNEL, SILICON, TYPES 2N7494U5, 2N7495U5, AND 2N7496U5, JANTXVR, F, G, AND H, AND JANSR, F, G, AND H
This specification covers the performance requirements for a N-channel, enhancement-mode, MOSFET, radiation hardened (Total Dose and Single Event Effects (SEE)), power transistor. Two levels of...
February 24, 2010
Semiconductor Device, Field Effect Radiation Hardened (Total Dose and Single Event Effects) Transistor, N-Channel, Silicon, Types 2N7494U5, 2N7495U5, and 2N7496U5, JANTXVR, F, G, and H, and JANSR, F, G, and H
This specification covers the performance requirements for a N-channel, enhancement-mode, MOSFET, radiation hardened (Total Dose and Single Event Effects (SEE)), power transistor. Two levels of...
January 27, 2005
SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTOR, N-CHANNEL, SILICON, TYPES 2N7494U5, 2N7495U5, AND 2N7496U5, JANTXVR, F, G, AND H, AND JANSR, F, G, AND H
This specification covers the performance requirements for a N-channel, enhancement-mode, MOSFET, radiation hardened (Total Dose and Single Event Effects (SEE)), power transistor. Two levels of...
April 10, 2002
SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTOR, N-CHANNEL, SILICON TYPES 2N7494U5, 2N7495U5 AND 2N7496U5 JANTXVR, F, G AND H AND JANSR, F, G AND H
A description is not available for this item.
December 6, 2001
SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTOR, N-CHANNEL, SILICON TYPES 2N7494U5, 2N7495U5 AND 2N7496U5 JANTXVR, F, G AND H AND JANSR, F, G AND H
This specification covers the performance requirements for a N-Channel, enhancement-mode, MOSFET, radiation hardened (Total Dose and Single Event Effects (SEE)), power transistor. Four levels of...