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NPFC - MIL-PRF-19500/745

TRANSISTOR, FIELD EFFECT TRANSISTOR, P-CHANNEL, RADIATION HARDENED, LOGIC-LEVEL SILICON, TYPES 2N7626, JANTXV AND JANS

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Organization: NPFC
Publication Date: 25 November 2020
Status: active
Page Count: 21
scope:

Scope.

This specification covers the performance requirements for a P-channel, enhancement-mode, radiation hardened (total dose and single event effects (SEE), low-threshold logic level, MOSFET, transistor. Two levels of product assurance (JANTXV and JANS) are provided for each encapsulated device, with avalanche energy maximum rating (EAS) and maximum avalanche current (IAS). Provisions for radiation hardness assurance (RHA) to two radiation levels ("R" and "F") are provided for JANTXV and JANS product assurance levels. See 6.7 for JANHC and JANKC die versions.

intended Use:

Semiconductors conforming to this specification are intended for original equipment design applications and logistic support of existing equipment.

Document History

MIL-PRF-19500/745
November 25, 2020
TRANSISTOR, FIELD EFFECT TRANSISTOR, P-CHANNEL, RADIATION HARDENED, LOGIC-LEVEL SILICON, TYPES 2N7626, JANTXV AND JANS
Scope. This specification covers the performance requirements for a P-channel, enhancement-mode, radiation hardened (total dose and single event effects (SEE), low-threshold logic level, MOSFET,...
October 30, 2019
TRANSISTOR, FIELD EFFECT TRANSISTOR, P-CHANNEL, RADIATION HARDENED, LOGIC-LEVEL SILICON, TYPES 2N7626, JANTXV AND JANS
Scope. This specification covers the performance requirements for a P-channel, enhancement-mode, radiation hardened (total dose and single event effects (SEE), low-threshold logic level, MOSFET,...
October 23, 2018
TRANSISTOR, FIELD EFFECT TRANSISTOR, P-CHANNEL, RADIATION HARDENED, LOGIC-LEVEL SILICON, TYPES 2N7626, JANTXV AND JANS
A description is not available for this item.
July 26, 2017
Semiconductor Device, Field Effect Transistor, P-Channel, Radiation Hardened (Total Dose and Single Event Effects), Logic- Level Silicon, Types 2N7626UB, 2N7626UBC, 2N7626UBN, 2N7626UBCN, JANTXVR, JANTXVF, JANSR, and JANSF
A description is not available for this item.
August 27, 2012
SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTOR, P-CHANNEL, RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS), LOGIC-LEVEL SILICON, TYPES 2N7626UB, 2N7626UBC, 2N7626UBN, 2N7626UBCN, JANTXVR, JANTXVF, JANSR, AND JANSF
This specification covers the performance requirements for a P-channel, enhancement-mode, radiation hardened (total dose and single event effects (SEE)), low-threshold logic level, MOSFET,...
May 13, 2011
SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTOR, P-CHANNEL, RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS), LOGIC-LEVEL SILICON, TYPES 2N7626UB, 2N7626UBC, 2N7626UBN, 2N7626UBCN, JANTXVR, JANTXVF, JANSR, AND JANSF
This specification covers the performance requirements for a P-channel, enhancement-mode, radiation hardened (total dose and single event effects (SEE)), low-threshold logic level, MOSFET,...
March 18, 2010
SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTOR, P-CHANNEL, RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS), LOGIC-LEVEL SILICON, TYPES 2N7626UB, 2N7626UBC, 2N7626UBN, 2N7626UBCN, JANTXVR, JANTXVF, JANSR, AND JANSF
This specification covers the performance requirements for a P-channel, enhancement-mode, radiation hardened (total dose and single event effects (SEE)), low-threshold logic level, MOSFET,...
February 26, 2009
SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTOR, P-CHANNEL, RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS), LOGIC-LEVEL SILICON, TYPES 2N7626UB, 2N7626UBC, JANTXVR, JANTXVF, JANSR, AND JANSF
This specification covers the performance requirements for a P-channel, enhancement-mode, radiation hardened (total dose and single event effects (SEE)), low-threshold logic level, MOSFET,...
June 5, 2008
SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTOR, P-CHANNEL, RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS), LOGIC-LEVEL SILICON, TYPES 2N7626UB, 2N7626UBC, JANTXVR, JANTXVF, JANSR, AND JANSF
This specification covers the performance requirements for a P-channel, enhancement-mode, radiation hardened (total dose and single event effects (SEE)), low-threshold logic level, MOSFET,...

References

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