NPFC - MIL-PRF-19500/755
TRANSISTOR, FIELD EFFECT, N-CHANNEL, RADIATION HARDENED, SILICON, ENCAPSULATED (THROUGH HOLE PACKAGE), TYPES 2N7588, 2N7590, 2N7592, AND 2N7594, JANTXVR AND F AND JANSR AND F
active, Most Current
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| Organization: | NPFC |
| Publication Date: | 3 February 2021 |
| Status: | active |
| Page Count: | 25 |
scope:
Scope.
This specification covers the performance requirements for an N-Channel, enhancement-mode, MOSFET, radiation hardened (total dose and single event effects (SEE)), power transistor. Two levels of product assurance (JANTXV and JANS) are provided for each encapsulated device, with avalanche energy maximum rating (EAS) and maximum avalanche current (IAS). Provisions for radiation hardness assurance (RHA) to two radiation levels ("R" and "F") are provided for JANTXV and JANS product assurance levels.
intended Use:
Semiconductors conforming to this specification are intended for original equipment design applications and logistic support of existing equipment.
Document History
May 31, 2023
TRANSISTOR, FIELD EFFECT, N-CHANNEL, RADIATION HARDENED, SILICON, ENCAPSULATED (THROUGH HOLE PACKAGE), TYPES 2N7588, 2N7590, 2N7592, AND 2N7594, JANTXVR AND F AND JANSR, F, AND G
Scope.
This specification covers the performance requirements for an N-Channel, enhancement-mode, MOSFET, radiation hardened (total dose and single event effects (SEE)), power transistor. Two levels...
August 17, 2022
TRANSISTOR, FIELD EFFECT, N-CHANNEL, RADIATION HARDENED, SILICON, ENCAPSULATED (THROUGH HOLE PACKAGE), TYPES 2N7588, 2N7590, 2N7592, AND 2N7594, JANTXVR AND F AND JANSR, F, AND G
Scope.
This specification covers the performance requirements for an N-Channel, enhancement-mode, MOSFET, radiation hardened (total dose and single event effects (SEE)), power transistor. Two levels...
MIL-PRF-19500/755
February 3, 2021
TRANSISTOR, FIELD EFFECT, N-CHANNEL, RADIATION HARDENED, SILICON, ENCAPSULATED (THROUGH HOLE PACKAGE), TYPES 2N7588, 2N7590, 2N7592, AND 2N7594, JANTXVR AND F AND JANSR AND F
Scope.
This specification covers the performance requirements for an N-Channel, enhancement-mode, MOSFET, radiation hardened (total dose and single event effects (SEE)), power transistor. Two levels...
October 4, 2019
TRANSISTOR, FIELD EFFECT, N-CHANNEL, RADIATION HARDENED, SILICON, ENCAPSULATED (THROUGH HOLE PACKAGE), TYPES 2N7588, 2N7590, 2N7592, AND 2N7594, JANTXVR AND F AND JANSR AND H
Scope.
This specification covers the performance requirements for an N-Channel, enhancement-mode, MOSFET, radiation hardened (total dose and single event effects (SEE)), power transistor. Two levels...
February 23, 2018
TRANSISTOR, FIELD EFFECT, N-CHANNEL, RADIATION HARDENED, SILICON, ENCAPSULATED (THROUGH HOLE PACKAGE), TYPES 2N7588, 2N7590, 2N7592, AND 2N7594,JANTXVR AND F AND JANSR AND H
This specification covers the performance requirements for an N-Channel, enhancement-mode, MOSFET, radiation hardened (total dose and single event effects (SEE)), power transistor. Two levels of...
September 14, 2017
TRANSISTOR, FIELD EFFECT, N-CHANNEL, RADIATION HARDENED, SILICON, ENCAPSULATED (THROUGH HOLE PACKAGE), TYPES 2N7588, 2N7590, 2N7592, AND 2N7594,JANTXVR AND F AND JANSR AND H
This specification covers the performance requirements for an N-Channel, enhancement-mode, MOSFET, radiation hardened (total dose and single event effects (SEE)), power transistor. Two levels of...
March 18, 2015
Semiconductor Device, Field Effect Radiation Hardened (Total Dose and Single Event Effects) Transistor, N-Channel, Silicon, Types 2N7588T3, 2N7590T3, 2N7592T3 and 2N7594T3, JANTVR, JANTXVF, JANSR and JANSF
A description is not available for this item.
May 19, 2010
SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTOR, N-CHANNEL, SILICON, TYPES 2N7588T3, 2N7590T3, 2N7592T3 AND 2N7594T3, JANTXVR, JANTXVF, JANSR AND JANSF
This specification covers the performance requirements for a N-channel, enhancement-mode, MOSFET, radiation hardened (total dose and single event effects (SEE)), power transistor. Two levels of...