NPFC - MIL-PRF-19500/543
TRANSISTOR, FIELD EFFECT, N-CHANNEL, SILICON REPETITIVE AVALANCHE, ENCAPSULATED (THROUGH-HOLE PACKAGES) AND UN-ENCAPSULATED (DIE), TYPES 2N6764, 2N6766, 2N6768, 2N6770, AND JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC
active, Most Current
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| Organization: | NPFC |
| Publication Date: | 8 March 2021 |
| Status: | active |
| Page Count: | 28 |
scope:
Scope.
This specification covers the performance requirements for N-channel, enhancement-mode, MOSFET, power transistors. Four levels of product assurance (JAN, JANTX, JANTXV, and JANS) are provided for each encapsulated device. Two levels of product assurance (JANHC and JANKC) are provided for each unencapsulated die, with avalanche energy ratings (EAS and EAR) and maximum avalanche current (IAR).
intended Use:
Semiconductors conforming to this specification are intended for original equipment design applications and logistic support of existing equipment.
Document History
MIL-PRF-19500/543
March 8, 2021
TRANSISTOR, FIELD EFFECT, N-CHANNEL, SILICON REPETITIVE AVALANCHE, ENCAPSULATED (THROUGH-HOLE PACKAGES) AND UN-ENCAPSULATED (DIE), TYPES 2N6764, 2N6766, 2N6768, 2N6770, AND JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC
Scope.
This specification covers the performance requirements for N-channel, enhancement-mode, MOSFET, power transistors. Four levels of product assurance (JAN, JANTX, JANTXV, and JANS) are provided...
March 30, 2016
TRANSISTOR, FIELD EFFECT, N-CHANNEL, SILICON REPETITIVE AVALANCHE, ENCAPSULATED (THROUGH-HOLE PACKAGES) AND UN-ENCAPSULATED (DIE), TYPES 2N6764, 2N6766, 2N6768, 2N6770, AND JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC
This specification covers the performance requirements for N-channel, enhancement-mode, MOSFET, power transistors. Four levels of product assurance (JAN, JANTX, JANTXV, and JANS) are provided for...
September 13, 2013
SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTORS, N-CHANNEL, SILICON REPETITIVE AVALANCHE, TYPES 2N6764, 2N6764T1, 2N6766, 2N6766T1, 2N6768, 2N6768T1, 2N6770, AND 2N6770T1, JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC
This specification covers the performance requirements for N-channel, enhancement-mode, MOSFET, power transistors. Four levels of product assurance are provided for each encapsulated device type as...
March 29, 2013
SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTORS, N-CHANNEL, SILICON REPETITIVE AVALANCHE, TYPES 2N6764, 2N6764T1, 2N6766, 2N6766T1, 2N6768, 2N6768T1, 2N6770, AND 2N6770T1, JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC
This specification covers the performance requirements for N-channel, enhancement-mode, MOSFET, power transistors. Four levels of product assurance are provided for each encapsulated device type as...
September 22, 2011
SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTORS, N-CHANNEL, SILICON REPETITIVE AVALANCHE, TYPES 2N6764, 2N6764T1, 2N6766, 2N6766T1, 2N6768, 2N6768T1, 2N6770, AND 2N6770T1, JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC
This specification covers the performance requirements for N-channel, enhancement-mode, MOSFET, power transistors. Four levels of product assurance are provided for each encapsulated device type as...
May 17, 2010
SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTORS, N-CHANNEL, SILICON REPETITIVE AVALANCHE, TYPES 2N6764, 2N6764T1, 2N6766, 2N6766T1, 2N6768, 2N6768T1, 2N6770, AND 2N6770T1, JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC
This specification covers the performance requirements for N-channel, enhancement-mode, MOSFET, power transistors. Four levels of product assurance are provided for each encapsulated device type as...
May 9, 2008
SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTORS, N-CHANNEL, SILICON REPETITIVE AVALANCHE, TYPES 2N6764, 2N6764T1, 2N6766, 2N6766T1, 2N6768, 2N6768T1, 2N6770, AND 2N6770T1, JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC
This specification covers the performance requirements for N-channel, enhancement-mode, MOSFET, power transistors. Four levels of product assurance are provided for each encapsulated device type as...
December 5, 2006
SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTORS, N-CHANNEL, SILICON REPETITIVE AVALANCHE, TYPES 2N6764, 2N6764T1, 2N6766, 2N6766T1, 2N6768, 2N6768T1, 2N6770, AND 2N6770T1, JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC
This specification covers the performance requirements for N-channel, enhancement-mode, MOSFET, power transistors. Four levels of product assurance are provided for each encapsulated device type as...
April 18, 2005
SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTORS, N-CHANNEL, SILICON REPETITIVE AVALANCHE, TYPES 2N6764, 2N6764T1, 2N6766, 2N6766T1, 2N6768, 2N6768T1, 2N6770, AND 2N6770T1, JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC
This specification covers the performance requirements for N-channel, enhancement-mode, MOSFET, power transistors. Four levels of product assurance are provided for each encapsulated device type as...
May 19, 2003
SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTORS, N-CHANNEL, SILICON REPETITIVE AVALANCHE, TYPES 2N6764, 2N6766, 2N6768, 2N6770, JAN, JANTX, JANTXV, JANS, JANHC AND JANKC
This specification covers the performance requirements for N-channel, enhancement-mode, MOSFET, power transistors. Four levels of product assurance are provided for each encapsulated device type as...
August 6, 2002
SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTORS, N-CHANNEL, SILICON REPETITIVE AVALANCHE, TYPES 2N6764, 2N6766, 2N6768, 2N6770, JAN, JANTX, JANXV, JANS, JANHC AND JANKC
A description is not available for this item.
September 7, 2001
SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTORS, N-CHANNEL, SILICON REPETITIVE AVALANCHE, TYPES 2N6764, 2N6766, 2N6768, 2N6770, JAN, JANTX, JANTXV, JANS, JANHC and JANKC
This specification covers the performance requirements for N-channel, enhancement-mode, MOSFET, power transistors. Four levels of product assurance are provided for each encapsulated device type as...
September 22, 1998
SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTORS, N-CHANNEL, SILICON REPETITIVE AVALANCHE, TYPES 2N6764, 2N6764T1, 2N6766, 2N6766T1, 2N6768, 2N6768T1, 2N6770, AND 2N6770T1, JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC
A description is not available for this item.
October 12, 1997
SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTORS, N-CHANNEL, SILICON TYPES 2N6764, 2N6766, 2N6768, 2N6770, JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC
A description is not available for this item.
August 5, 1997
SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTORS, N-CHANNEL, SILICON TYPES 2N6764, 2N6766, 2N6768, 2N6770, JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC
This specification covers the performance requirements for N-channel, enhancement-mode, MOSFET, power transistor intended for use in power switching applications. Four levels of product assurance are...
November 17, 1993
SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTORS, N-CHANNEL, SILICON TYPES 2N6764, 2N6766, 2N6768, 2N6770 JANTX, JANTXV, JANS AND JANC
A description is not available for this item.
June 30, 1992
SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTORS, N-CHANNEL, SILICON TYPES 2N6764, 2N6766, 2N6768, 2N6770, JANTX, JANTXV, JANS, AND JANC
This specification covers the detail requirements for N-channel, enhancement-mode, MOSFET, power transistor intended for use in high density power switching applications. Four levels of product...
May 31, 1988
SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTORS, N-CHANNEL, SILICON TYPES 2N6764, 2N6766, 2N6768, 2N6770, JANTX, JANTXV, AND JANS
A description is not available for this item.
September 8, 1987
SEMICONDUCTOR DEVICE, FIELD EFFECT RRANSISTOR, N-CHANNEL, SILICON TYPES 2N6764, 2N6766, 2N6768, 2N6770, JANTX, JANTXV, AND JANS
A description is not available for this item.
March 24, 1986
SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTORS, N-CHANNEL, SILICON TYPES 2N6764, 2N6766, 2N6768 AND 2N6770 JANTX, JANTXV, AND JANS
A description is not available for this item.
June 15, 1981
SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTOR, N-CHANNEL, SILICON TYPES 2N6764, 2N6766, 2N6768 AND 2N6770 JAN, JANTX AND JANTXV
A description is not available for this item.
August 1, 1980
SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTOR, N-CHANNEL, SILICON TYPES 2N6764 AND 2N6768 JAN, JANTX AND JANTXV
A description is not available for this item.