DLA - MIL-PRF-19500/692B CANC NOTICE 1
TRANSISTOR, FIELD EFFECT, N-CHANNEL, SILICON, TYPES 2N7515, 2N7516, AND 2N7517, JANTXV AND JANS
inactive, Most Current
| Organization: | DLA |
| Publication Date: | 30 August 2021 |
| Status: | inactive |
| Page Count: | 1 |
Document History
MIL-PRF-19500/692B CANC NOTICE 1
August 30, 2021
TRANSISTOR, FIELD EFFECT, N-CHANNEL, SILICON, TYPES 2N7515, 2N7516, AND 2N7517, JANTXV AND JANS
A description is not available for this item.
July 29, 2015
TRANSISTOR, FIELD EFFECT, N-CHANNEL, SILICON, TYPES 2N7515, 2N7516, AND 2N7517, JANTXV AND JANS
This specification covers the performance requirements for a N-Channel, enhancement-mode, MOSFET, radiation hardened (total dose and single event effects (SEE) characterization), power transistor....
May 7, 2014
Semiconductor Device, Field Effect Radiation Hardened (Total Dose and Single Event Effects) Transistor, N-Channel Silicon, Types 2N7515, 2N7516, and 2N7517, JANTXVD, R and JANSD, R
A description is not available for this item.
July 9, 2009
Semiconductor Device, Field Effect Radiation Hardened (Total Dose and Single Event Effects) Transistor, N-Channel Silicon, Types 2N7515, 2N7516, and 2N7517, JANTXVD, R and JANSD, R
This specification covers the performance requirements for a N-Channel, enhancement-mode, MOSFET, radiation hardened (total dose and single event effects (SEE) characterization), power transistor....
September 10, 2004
SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTOR, N-CHANNEL SILICON, TYPES 2N7515, 2N7516, AND 2N7517, JANTXVD, R AND JANSD, R
This specification covers the performance requirements for a N-Channel, enhancement-mode, MOSFET, radiation hardened (total dose and single event effects (SEE) characterization), power transistor....
March 8, 2001
SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTOR, N-CHANNEL SILICON TYPES 2N7515, 2N7516, AND 2N7517 JANTXVD, R AND JANSD, R
This specification covers the performance requirements for a N-Channel, enhancement-mode, MOSFET, radiation hardened (total dose and single event effects (SEE) characterization), power transistor....