DLA - DSCC-VID-V62/03648 REV C
MICROCIRCUIT, DIGITAL, ADVANCED HIGH SPEED CMOS, QUADRUPLE BUS BUFFER GATE WITH 3-STATE OUTPUTS, MONOLITHIC SILICON
active, Most Current
| Organization: | DLA |
| Publication Date: | 21 June 2022 |
| Status: | active |
| Page Count: | 11 |
scope:
Scope.
This drawing documents the general requirements of a high performance quadruple bus buffer gate with 3-state outputs microcircuit, with an operating temperature range of -55ºC to +125ºC.
Document History
DSCC-VID-V62/03648 REV C
June 21, 2022
MICROCIRCUIT, DIGITAL, ADVANCED HIGH SPEED CMOS, QUADRUPLE BUS BUFFER GATE WITH 3-STATE OUTPUTS, MONOLITHIC SILICON
Scope.
This drawing documents the general requirements of a high performance quadruple bus buffer gate with 3-state outputs microcircuit, with an operating temperature range of -55ºC to +125ºC.
August 25, 2015
MICROCIRCUIT, DIGITAL, ADVANCED HIGH SPEED CMOS, QUADRUPLE BUS BUFFER GATE WITH 3-STATE OUTPUTS, MONOLITHIC SILICON
This drawing documents the general requirements of a high performance quadruple bus buffer gate with 3-state outputs microcircuit, with an operating temperature range of -55°C to +125°C.
March 16, 2009
MICROCIRCUIT, DIGITAL, ADVANCED HIGH SPEED CMOS, QUADRUPLE BUS BUFFER GATE WITH 3-STATE OUTPUTS, MONOLITHIC SILICON
This drawing documents the general requirements of a high performance quadruple bus buffer gate with 3-state outputs microcircuit, with an operating temperature range of -55°C to +125°C.
August 12, 2003
MICROCIRCUIT, DIGITAL, ADVANCED HIGH SPEED CMOS, QUADRUPLE BUS BUFFER GATE WITH 3-STATE OUTPUTS, MONOLITHIC SILICON
A description is not available for this item.