DLA - MIL-PRF-19500/664F (1)
TRANSISTOR, FIELD EFFECT, RADIATION HARDENED N-CHANNEL, SILICON, ENCAPSULATED (SURFACE MOUNT AND CARRIER BOARD PACKAGES), TYPES 2N7431, 2N7432, AND 2N7433, JANTXVR, F, G, AND H; AND JANSR, F, G, AND H
active, Most Current
| Organization: | DLA |
| Publication Date: | 23 August 2022 |
| Status: | active |
| Page Count: | 28 |
scope:
Scope.
This specification covers the performance requirements for an N-channel, enhancement-mode, MOSFET, radiation hardened, power transistor. Two levels of product assurance (JANTXV and JANS) are provided for each encapsulated device with avalanche energy maximum rating (EAS) and maximum avalanche current (IAS). Provisions for radiation hardness assurance (RHA) to four radiation levels ("R", "F", "G" and "H") are provided for JANS and JANTXV product assurance levels. See 6.7 for JANHC and JANKC die versions. See 6.8 for through hole mount versions.
intended Use:
Semiconductors conforming to this specification are intended for original equipment design applications and logistic support of existing equipment.
Document History
MIL-PRF-19500/664F (1)
August 23, 2022
TRANSISTOR, FIELD EFFECT, RADIATION HARDENED N-CHANNEL, SILICON, ENCAPSULATED (SURFACE MOUNT AND CARRIER BOARD PACKAGES), TYPES 2N7431, 2N7432, AND 2N7433, JANTXVR, F, G, AND H; AND JANSR, F, G, AND H
Scope.
This specification covers the performance requirements for an N-channel, enhancement-mode, MOSFET, radiation hardened, power transistor. Two levels of product assurance (JANTXV and JANS) are...
July 24, 2017
TRANSISTOR, FIELD EFFECT, RADIATION HARDENED N-CHANNEL, SILICON, ENCAPSULATED (SURFACE MOUNT AND CARRIER BOARD PACKAGES), TYPES 2N7431, 2N7432, AND 2N7433, JANTXVR, F, G, AND H; AND JANSR, F, G, AND H
This specification covers the performance requirements for an N-channel, enhancement-mode, MOSFET, radiation hardened, power transistor. Two levels of product assurance (JANTXV and JANS) are provided...
June 24, 2016
TRANSISTOR, FIELD EFFECT, RADIATION HARDENED N-CHANNEL, SILICON, ENCAPSULATED (SURFACE MOUNT AND CARRIER BOARD PACKAGES), TYPES 2N7431, 2N7432, AND 2N7433, JANTXVR, F, G, AND H; AND JANSR, F, G, AND H
This specification covers the performance requirements for an N-channel, enhancement-mode, MOSFET, radiation hardened, power transistor. Two levels of product assurance (JANTXV and JANS) are provided...
September 6, 2012
Semiconductor Device, Field Effect Radiation Hardened (Total Dose Only) Transistors, N-Channel, Silicon, Types 2N7431U, 2N7432U, and 2N7433U, JANTXVR, F, G, and H; and JANSR, F, G, and H
A description is not available for this item.
March 28, 2012
SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED TRANSISTORS, N-CHANNEL, SILICON, TYPES 2N7431U, 2N7432U, AND 2N7433U, JANTXVR, F, G, AND H; AND JANSR, F, G, AND H
This specification covers the performance requirements for an N-channel, enhancement-mode, MOSFET, radiation hardened, power transistor. Two levels of product assurance are provided for each device...
November 19, 2007
SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE ONLY) TRANSISTORS, N-CHANNEL, SILICON, TYPES 2N7431U, 2N7432U, AND 2N7433U, JANTXVR, F, G, AND H; AND JANSR, F, G, AND H
This specification covers the performance requirements for an N-channel, enhancement-mode, MOSFET, radiation hardened (total dose only), power transistor. Two levels of product assurance are provided...
November 10, 2006
SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE ONLY) TRANSISTORS, N-CHANNEL, SILICON, TYPES 2N7431U, 2N7432U, AND 2N7433U, JANTXVR, F, G, AND H; AND JANSR, F, G, AND H
This specification covers the performance requirements for an N-channel, enhancement-mode, MOSFET, radiation hardened (total dose only), power transistor. Two levels of product assurance are provided...
November 5, 2003
SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE ONLY) TRANSISTORS, N-CHANNEL, SILICON TYPES 2N7431U, 2N7432U, and 2N7433U JANTXVR, F, G, and H; and JANSR, F, G, and H
This specification covers the performance requirements for an N-channel, enhancement-mode, MOSFET, radiation hardened (total dose only), power transistor. Two levels of product assurance are provided...
October 18, 2002
SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE ONLY) TRANSISTORS, N-CHANNEL, SILICON, TYPES 2N7431U, 2N7432U and 2N7433U JANTXVR, F, G, and H; and JANSR, F, G, and H
A description is not available for this item.
April 5, 2002
SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE ONLY) TRANSISTORS, N-CHANNEL, SILICON, TYPES 2N7431U, 2N7432U, AND 2N7433U JANTXVR, F, G, AND H; AND JANSR, F, G, AND H
A description is not available for this item.
June 12, 1998
SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE ONLY) TRANSISTORS, N-CHANNEL, SILICON, TYPES 2N7431U, 2N7432U, AND 2N7433U JANTXVR, F, G, AND H; AND JANSR, F, G, AND H
This specification covers the performance requirements for an N-channel, enhancement-mode, MOSFET, radiation hardened (total dose only), power transistor. Two levels of product assurance are provided...