DLA - MIL-PRF-19500/551H (1)
SEMICONDUCTOR DEVICE, DIODE, SILICON, TRANSIENT VOLTAGE SUPPRESSOR TYPES 1N6461 THROUGH 1N6468, 1N6461US THROUGH 1N6468US, AND 1N6461URS THROUGH 1N6468URS, QUALITY LEVELS JAN, JANTX, AND JANTXV
active, Most Current
| Organization: | DLA |
| Publication Date: | 30 December 2022 |
| Status: | active |
| Page Count: | 19 |
scope:
Scope.
This specification covers the performance requirements for 500-watt peak pulse, power, silicon, transient voltage suppressor diodes. Three levels of product assurance (JAN, JANTX, and JANTXV) are provided for each device type as specified in MIL-PRF-19500.
intended Use:
Semiconductors conforming to this specification are intended for original equipment design applications and logistic support of existing equipment.
Document History
MIL-PRF-19500/551H (1)
December 30, 2022
SEMICONDUCTOR DEVICE, DIODE, SILICON, TRANSIENT VOLTAGE SUPPRESSOR TYPES 1N6461 THROUGH 1N6468, 1N6461US THROUGH 1N6468US, AND 1N6461URS THROUGH 1N6468URS, QUALITY LEVELS JAN, JANTX, AND JANTXV
Scope.
This specification covers the performance requirements for 500-watt peak pulse, power, silicon, transient voltage suppressor diodes. Three levels of product assurance (JAN, JANTX, and JANTXV)...
December 4, 2017
SEMICONDUCTOR DEVICE, DIODE, SILICON, TRANSIENT VOLTAGE SUPPRESSOR TYPES 1N6461 THROUGH 1N6468, 1N6461US THROUGH 1N6468US, AND 1N6461URS THROUGH 1N6468URS, JAN, JANTX, AND JANTXV
This specification covers the performance requirements for 500-watt peak pulse, power, silicon, transient voltage suppressor diodes. Three levels of product assurance are provided for each device...
May 23, 2014
SEMICONDUCTOR DEVICE, DIODE, SILICON, TRANSIENT VOLTAGE SUPPRESSOR TYPES 1N6461 THROUGH 1N6468, 1N6461US THROUGH 1N6468US, AND 1N6461URS THROUGH 1N6468URS, JAN, JANTX, AND JANTXV
This specification covers the performance requirements for 500-watt peak pulse, power, silicon, transient voltage suppressor diodes. Three levels of product assurance are provided for each device...
September 12, 2013
SEMICONDUCTOR DEVICE, DIODE, SILICON, TRANSIENT VOLTAGE SUPPRESSOR TYPES 1N6461 THROUGH 1N6468, 1N6461US THROUGH 1N6468US, AND 1N6461URS THROUGH 1N6468URS, JAN, JANTX, AND JANTXV
This specification covers the performance requirements for 500-watt peak pulse, power, silicon, transient voltage suppressor diodes. Three levels of product assurance are provided for each device...
August 7, 2012
SEMICONDUCTOR DEVICE, DIODE, SILICON, TRANSIENT VOLTAGE SUPPRESSOR TYPES 1N6461 THROUGH 1N6468, 1N6461US THROUGH 1N6468US, AND 1N6461URS THROUGH 1N6468URS, JAN, JANTX, AND JANTXV
This specification covers the performance requirements for 500-watt peak pulse, power, silicon, transient voltage suppressor diodes. Three levels of product assurance are provided for each device...
August 26, 2011
SEMICONDUCTOR DEVICE, DIODE, SILICON, TRANSIENT VOLTAGE SUPPRESSOR TYPES 1N6461 THROUGH 1N6468, 1N6461US THROUGH 1N6468US, AND 1N6461URS THROUGH 1N6468URS, JAN, JANTX, AND JANTXV
This specification covers the performance requirements for 500-watt peak pulse, power, silicon, transient voltage suppressor diodes. Three levels of product assurance are provided for each device...
October 18, 2010
SEMICONDUCTOR DEVICE, DIODE, SILICON, TRANSIENT VOLTAGE SUPPRESSOR TYPES 1N6461 THROUGH 1N6468, 1N6461US THROUGH 1N6468US, AND 1N6461URS THROUGH 1N6468URS, JAN, JANTX, AND JANTXV
This specification covers the performance requirements for 500-watt peak pulse, power, silicon, transient voltage suppressor diodes. Three levels of product assurance are provided for each device...
October 26, 2000
SEMICONDUCTOR DEVICE, DIODE, SILICON, TRANSIENT VOLTAGE SUPPRESSOR TYPES 1N6461 THROUGH 1N6468 AND 1N6461US THROUGH 1N6468US JAN, JANTX, JANTXV, JANHC AND JANKC
A description is not available for this item.
December 10, 1999
SEMICONDUCTOR DEVICE, DIODE, SILICON, TRANSIENT VOLTAGE SUPPRESSOR TYPES 1N6461 THROUGH 1N6468 AND 1N6461US THROUGH 1N6468US JAN, JANTX, JANTXV, JANHC AND JANKC
A description is not available for this item.
September 12, 1999
SEMICONDUCTOR DEVICE, DIODE, SILICON, TRANSIENT VOLTAGE SUPPRESSOR TYPES 1N6461 THROUGH 1N6468 AND 1N6461US THROUGH 1N6468US JAN, JANTX, JANTXV, JANHC AND JANKC
This specification covers the performance requirements for 500-watt peak pulse, power, silicon, transient voltage suppressor diodes. Three levels of product assurance are provided for each...
April 29, 1995
SEMICONDUCTOR DEVICE, DIODE, SILICON, TRANSIENT VOLTAGE SUPPRESSOR TYPES 1N6461 THROUGH 1N6468 AND 1N6461US THROUGH 1N6468US JAN, JANTX, JANTXV, JANHC AND JANKC
A description is not available for this item.
December 29, 1994
SEMICONDUCTOR DEVICE, DIODE, SILICON, TRANSIENT VOLTAGE SUPPRESSOR TYPES 1N6461 THROUGH 1N6468 AND 1N6461US THROUGH 1N6468US JAN, JANTX, JANTXV, JANHC AND JANKC
This specification covers the detail requirements for 500-watt peak pulse, power, silicon, transient voltage suppressor diodes. Three levels of product assurance are provided for each encapsulated...
September 18, 1992
SEMICONDUCTOR DEVICE, DIODE, SILICON, TRANSIENT VOLTAGE SUPPRESSOR TYPES 1N6461, THROUGH 1N6468 AND 1N6461US, THROUGH 1N6468US JANTX AND JANTXV
A description is not available for this item.
August 20, 1991
SEMICONDUCTOR DEVICE, DIODE, SILICON, TRANSIENT VOLTAGE SUPPRESSOR TYPES 1N6461 THROUGH 1N6468 AND 1N6461US THROUGH 1N6468US JANTX, JANTXV
This specification covers the detail requirements for 500-watt peak pulse, power, silicon transient voltage suppressor diodes. Two levels of product assurance are provided for each device as...
August 13, 1987
SEMICONDUCTOR DEVICE, DIODE, SILICON, TRANSIENT VOLTAGE SUPPRESSOR TYPES 1N6461 THROUGH 1N6468 JAN, JANTX, AND JANTXV
A description is not available for this item.
February 15, 1983
SEMICONDUCTOR DEVICE, DIODE SILICON TRANSIENT VOLTAGE SUPPRESSOR TYPES 1N6461 THROUGH 1N6468 JAN, JANTX, AND JANTXV
A description is not available for this item.
October 1, 1981
SEMICONDUCTOR DEVICE, DIODE SILICON TRANSIENT VOLTAGE SUPPRESSOR TYPES 1N6461 THROUGH 1N6468 JAN, JANTX, AND JANTXV
A description is not available for this item.