DLA - MIL-PRF-19500/758A CANC NOTICE 1
TRANSISTOR, FIELD EFFECT, RADIATION HARDENED N-CHANNEL, SILICON, DEVICE TYPES 2N7609U8 AND 2N7609U8C, JANTXV AND JANS
inactive, Most Current
| Organization: | DLA |
| Publication Date: | 16 March 2023 |
| Status: | inactive |
| Page Count: | 1 |
Document History
MIL-PRF-19500/758A CANC NOTICE 1
March 16, 2023
TRANSISTOR, FIELD EFFECT, RADIATION HARDENED N-CHANNEL, SILICON, DEVICE TYPES 2N7609U8 AND 2N7609U8C, JANTXV AND JANS
A description is not available for this item.
July 28, 2017
TRANSISTOR, FIELD EFFECT, RADIATION HARDENED N-CHANNEL, SILICON, DEVICE TYPES 2N7609U8 AND 2N7609U8C, JANTXV AND JANS
This specification covers the performance requirements for N-channel, enhancement-mode, MOSFET, radiation hardened (total dose and single event effects (SEE)), power transistor. Two levels of product...
March 25, 2015
TRANSISTOR, FIELD EFFECT, RADIATION HARDENED N-CHANNEL, SILICON, DEVICE TYPES 2N7609U8 AND 2N7609U8C, JANTXV AND JANS
This specification covers the performance requirements for N-channel, enhancement-mode, MOSFET, radiation hardened (total dose and single event effects (SEE)), power transistor. Two levels of product...
June 28, 2010
SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTOR, N-CHANNEL, SILICON, TYPES 2N7609U8 AND 2N7609U8C, JANTXVR, F AND G AND JANSR, F AND G
This specification covers the performance requirements for N-channel, enhancement-mode, MOSFET, radiation hardened (total dose and single event effects (SEE)), power transistor. Two levels of product...