scope:

This publication presents guidelines for evaluating the Time Dependent Breakdown (TDB) reliability of GaN power switches. It is applicable to planar enhancement-mode, depletion-mode, GaN integrated power solutions and cascode GaN power switches. If the GaN power component used in a GaN integrated power solution has been tested by HTRB either individually or as part of the integrated power solution, then this guideline will be met.

This guideline will cover suggested stress conditions and related test parameters for evaluating the TDB reliability of GaN power transistors using off-state bias. These stress conditions and test parameters are designed to evaluate the reliability performance of GaN products over their useful lifetime under accelerated stress conditions. The stress described in this document is referred to as continuous DC voltage with the device in reverse bias (Off state). Temperature and/or voltage may be used to accelerate the rate of aging mechanisms of the devices.

Methods for determining voltage and temperature acceleration are beyond the scope of this guideline. Suppliers are to provide the data and experimental methods used upon request by the customers and to be in compliance with JESD91. Throughout this guideline, it will be assumed that voltage and temperature acceleration coefficients are known quantities.

In the case of an GaN device integrated with a silicon device this document only applicable to the GaN portion of the device and does not cover off state failure mechanisms of the non-GaN components.