UNLIMITED FREE ACCESS TO THE WORLD'S BEST IDEAS

close
Already an Engineering360 user? Log in.

This is embarrasing...

An error occurred while processing the form. Please try again in a few minutes.

Customize Your Engineering360 Experience

close
Privacy Policy

This is embarrasing...

An error occurred while processing the form. Please try again in a few minutes.

CEI EN 60749-34

Semiconductor devices - Mechanical and climatic test methods Part 34: Power cycling

active, Most Current
Buy Now
Organization: CEI
Publication Date: 1 February 2012
Status: active
Page Count: 18
ICS Code (Semiconductor devices in general): 31.080.01
scope:

Scope and object

This part of IEC 60749 describes a test method used to determine the resistance of a semiconductor device to thermal and mechanical stresses due to cycling the power dissipation of the internal semiconductor die and internal connectors. This happens when lowvoltage operating biases for forward conduction (load currents) are periodically applied and removed, causing rapid changes of temperature. The power cycling test is intended to simulate typical applications in power electronics and is complementary to high temperature operating life (see IEC 60749-23). Exposure to this test may not induce the same failure mechanisms as exposure to air-to-air temperature cycling, or to rapid change of temperature using the two-fluid-baths method. This test causes wear-out and is considered destructive.

NOTE It is not the intention of this specification to provide prediction models for lifetime evaluation.

Document History

CEI EN 60749-34
February 1, 2012
Semiconductor devices - Mechanical and climatic test methods Part 34: Power cycling
Scope and object This part of IEC 60749 describes a test method used to determine the resistance of a semiconductor device to thermal and mechanical stresses due to cycling the power dissipation of...

References

Advertisement