DLA - DSCC-VID-V62/13606
MICROCIRCUIT, MEMORY, 3.3 V CMOS FIRST-IN, FIRST-OUT, MONOLITHIC SILICON
active, Most Current
| Organization: | DLA |
| Publication Date: | 20 June 2013 |
| Status: | active |
| Page Count: | 36 |
scope:
This drawing documents the general requirements of a high performance 3.3 V CMOS first-in, first-out (FIFO) microcircuit, with an operating temperature range of -55°C to +125°C.
Document History
DSCC-VID-V62/13606
June 20, 2013
MICROCIRCUIT, MEMORY, 3.3 V CMOS FIRST-IN, FIRST-OUT, MONOLITHIC SILICON
This drawing documents the general requirements of a high performance 3.3 V CMOS first-in, first-out (FIFO) microcircuit, with an operating temperature range of -55°C to +125°C.