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NPFC - MIL-S-19500/230

SEMICONDUCTOR DEVICE, DIODE, SILICON, HIGH-CONDUCTANCE TYPE JAN-1N3207

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Organization: NPFC
Publication Date: 12 September 1968
Status: active
Page Count: 1

Document History

Semiconductor Device, Diode, Silicon, High-Conductance Type JAN- 1N3207
A description is not available for this item.
July 12, 2011
Semiconductor Device, Diode, Silicon, High-Conductance Type JAN- 1N3207
A description is not available for this item.
March 24, 2004
SEMICONDUCTOR DEVICE, DIODE, SILICON, HIGH-CONDUCTANCE TYPE JAN-1N3207
A description is not available for this item.
June 7, 1999
SEMICONDUCTOR DEVICE, DIODE, SILICON, HIGH-CONDUCTANCE TYPE JAN-1N3207
A description is not available for this item.
August 29, 1988
SEMICONDUCTOR DEVICE, DIODE, SILICON, HIGH-CONDUCTANCE TYPE JAN-1N3207
A description is not available for this item.
MIL-S-19500/230
September 12, 1968
SEMICONDUCTOR DEVICE, DIODE, SILICON, HIGH-CONDUCTANCE TYPE JAN-1N3207
A description is not available for this item.
February 12, 1965
SEMICONDUCTOR DEVICE, DIODE, SILICON, HIGH-CONDUCTANCE TYPE JAN-1N3207
This specification covers the detail requirements for silicon, high-conductance diodes, for use as thin-film or magnetic-core drivers.
May 11, 1964
SEMICONDUCTOR DEVICE, DIODE, SILICON, HIGH-CONDUCTANCE TYPE JAN-1N3207
A description is not available for this item.
October 30, 1962
SEMICONDUCTOR DEVICE, DIODE, SILICON, HIGH-CONDUCTANCE TYPE JAN-1N3207
A description is not available for this item.

References

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