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DOD - SMD 5962-84038

MICROCIRCUIT, DIGITAL, HIGH-SPEED CMOS, TRIPLE 3-INPUT NAND GATE, MONOLITHIC SILICON

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Organization: DOD
Publication Date: 26 August 2015
Status: active
Page Count: 15
scope:

This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels is reflected in the PIN.

intended Use:

Microcircuits conforming to this drawing are intended for use for Government microcircuit applications (original equipment), design applications, and logistics purposes.

Document History

November 22, 2021
MICROCIRCUIT, DIGITAL, HIGH-SPEED CMOS, TRIPLE 3-INPUT NAND GATE, MONOLITHIC SILICON
Scope. This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead...
SMD 5962-84038
August 26, 2015
MICROCIRCUIT, DIGITAL, HIGH-SPEED CMOS, TRIPLE 3-INPUT NAND GATE, MONOLITHIC SILICON
This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead finishes...
August 17, 2009
MICROCIRCUIT, DIGITAL, HIGH-SPEED CMOS, TRIPLE 3-INPUT NAND GATE, MONOLITHIC SILICON
This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead finishes...
January 25, 2002
MICROCIRCUIT, DIGITAL, HIGH-SPEED CMOS, TRIPLE 3-INPUT NAND GATE, MONOLITHIC SILICON
A description is not available for this item.
April 18, 1988
MICROCIRCUIT, DIGITAL, HIGH-SPEED CMOS, TRIPLE 3-INPUT NAND GATE, MONOLITHIC SILICON
A description is not available for this item.

References

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