DLA - DSCC-VID-V62/04677 REV B
MICROCIRCUIT, DIGITAL, ADVANCED BIPOLAR CMOS, 3.3-V ABT OCTAL REGISTERED TRANSCEIVER WITH 3-STATE OUTPUTS, MONOLITHIC SILICON
inactive
| Organization: | DLA |
| Publication Date: | 21 March 2016 |
| Status: | inactive |
| Page Count: | 11 |
scope:
This drawing documents the general requirements of a high performance 3.3-V ABT octal registered transceiver with 3-state outputs microcircuit, with an operating temperature range of -40°C to +85°C.
Document History
November 21, 2022
MICROCIRCUIT, DIGITAL, ADVANCED BIPOLAR CMOS, 3.3-V ABT OCTAL REGISTERED TRANSCEIVER WITH 3-STATE OUTPUTS, MONOLITHIC SILICON
Scope.
This drawing documents the general requirements of a high performance 3.3-V ABT octal registered transceiver with 3-state outputs microcircuit, with an operating temperature range of -40ºC to...
DSCC-VID-V62/04677 REV B
March 21, 2016
MICROCIRCUIT, DIGITAL, ADVANCED BIPOLAR CMOS, 3.3-V ABT OCTAL REGISTERED TRANSCEIVER WITH 3-STATE OUTPUTS, MONOLITHIC SILICON
This drawing documents the general requirements of a high performance 3.3-V ABT octal registered transceiver with 3-state outputs microcircuit, with an operating temperature range of -40°C to +85°C.
June 22, 2010
MICROCIRCUIT, DIGITAL, ADVANCED BIPOLAR CMOS, 3.3-V ABT OCTAL REGISTERED TRANSCEIVER WITH 3-STATE OUTPUTS, MONOLITHIC SILICON
This drawing documents the general requirements of a high performance 3.3-V ABT octal registered transceiver with 3-state outputs microcircuit, with an operating temperature range of -40°C to +85°C.
March 11, 2004
MICROCIRCUIT, DIGITAL, ADVANCED BIPOLAR CMOS, 3.3-V ABT OCTAL REGISTERED TRANSCEIVER WITH 3-STATE OUTPUTS, MONOLITHIC SILICON
A description is not available for this item.