DOD - SMD 5962-02518
MICROCIRCUIT MEMORY CMOS, DIGITAL, 256M X 8 Bit STACKED DIE (2Gbit) SYNCHRONOUS DRAM (SDRAM), MODULE
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| Organization: | DOD |
| Publication Date: | 18 May 2017 |
| Status: | active |
| Page Count: | 35 |
scope:
This drawing documents three product assurance class levels consisting of space application (device Class V), high reliability (device class Q), and nontraditional performance environment (device Class N). A choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels are reflected in the PIN. For device Class N, the user is cautioned to assure that the device is appropriate for the application environment.
intended Use:
Microcircuits conforming to this drawing are intended for use for Government microcircuit applications (original equipment), design applications, and logistics purposes.
Document History
SMD 5962-02518
May 18, 2017
MICROCIRCUIT MEMORY CMOS, DIGITAL, 256M X 8 Bit STACKED DIE (2Gbit) SYNCHRONOUS DRAM (SDRAM), MODULE
This drawing documents three product assurance class levels consisting of space application (device Class V), high reliability (device class Q), and nontraditional performance environment (device...
December 3, 2009
MICROCIRCUIT MEMORY CMOS, DIGITAL, 256M X 8 BIT STACKED DIE (2GBIT) SYNCHRONOUS DRAM (SDRAM), MODULE
This drawing documents three product assurance class levels consisting of space application (device Class V), high reliability (device classes M and Q), and nontraditional performance environment...
February 7, 2003
MICROCIRCUIT MEMORY CMOS, DIGITAL, 256M X 8 BIT STACKED DIE (2GBIT) SYNCHRONOUS DRAM (SDRAM), MODULE
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