DLA - DSCC-DWG-V62/17615
MICROCIRCUIT, LINEAR, 0.01 GHz to 10 GHz, MMIC, GaAs, pHMET RF GAIN BLOCK, MONOLITHIC SILICON
inactive
| Organization: | DLA |
| Publication Date: | 16 November 2017 |
| Status: | inactive |
| Page Count: | 11 |
scope:
This drawing documents the general requirements of a high performance 0.01 GHz to 10 GHz, monolithic microwave integrated circuit (MMIC), gallium arsenide (GaAs), pseudomorphic high electron mobility transistor (pHEMT) radio frequency (RF) gain block microcircuit, with an operating temperature range of -55OC to +105OC.
Document History
March 6, 2020
MICROCIRCUIT, LINEAR, 0.01 GHz to 10 GHz, MMIC, GaAs, pHMET RF GAIN BLOCK, MONOLITHIC SILICON
Scope.
This drawing documents the general requirements of a high performance 0.01 GHz to 10 GHz, monolithic microwave integrated circuit (MMIC), gallium arsenide (GaAs), pseudomorphic high electron...
DSCC-DWG-V62/17615
November 16, 2017
MICROCIRCUIT, LINEAR, 0.01 GHz to 10 GHz, MMIC, GaAs, pHMET RF GAIN BLOCK, MONOLITHIC SILICON
This drawing documents the general requirements of a high performance 0.01 GHz to 10 GHz, monolithic microwave integrated circuit (MMIC), gallium arsenide (GaAs), pseudomorphic high electron mobility...