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DOD - SMD 5962-96703

MICROCIRCUIT, DIGITAL, RADIATION HARDENED ADVANCED CMOS, QUAD 2-INPUT NAND GATE WITH OPEN DRAIN, MONOLITHIC SILICON

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Organization: DOD
Publication Date: 14 September 2007
Status: inactive
Page Count: 23
scope:

This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels is reflected in the PIN.

intended Use:

Microcircuits conforming to this drawing are intended for use for Government microcircuit applications (original equipment), design applications, and logistics purposes.

Document History

January 31, 2020
MICROCIRCUIT, DIGITAL, ADVANCED CMOS, RADIATION HARDENED, QUAD 2-INPUT NAND GATE WITH OPEN DRAIN, MONOLITHIC SILICON
Scope. This drawing documents two product assurance class levels consisting of high reliability (device classes Q) and space application (device class V). A choice of case outlines and lead finishes...
October 21, 2010
MICROCIRCUIT, DIGITAL, ADVANCED CMOS, RADIATION HARDENED, QUAD 2-INPUT NAND GATE WITH OPEN DRAIN, MONOLITHIC SILICON
This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead finishes...
SMD 5962-96703
September 14, 2007
MICROCIRCUIT, DIGITAL, RADIATION HARDENED ADVANCED CMOS, QUAD 2-INPUT NAND GATE WITH OPEN DRAIN, MONOLITHIC SILICON
This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead finishes...
June 7, 2000
MICROCIRCUIT, DIGITAL, RADIATION HARDENED ADVANCED CMOS, QUAD 2-INPUT NAND GATE WITH OPEN DRAIN, MONOLITHIC SILICON
Microcircuits conforming to this drawing are intended for use for Government microcircuit applications (original equipment), design applications, and logistics purposes. Microcircuits covered by...
February 19, 1999
MICROCIRCUIT, DIGITAL, RADIATION HARDENED ADVANCED CMOS, QUAD 2-INPUT NAND GATE WITH OPEN DRAIN, MONOLITHIC SILICON
A description is not available for this item.
October 22, 1997
MICROCIRCUIT, DIGITAL, RADIATION HARDENED ADVANCED CMOS, QUAD 2-INPUT NAND GATE WITH OPEN DRAIN, MONOLITHIC SILICON
A description is not available for this item.
December 5, 1995
MICROCIRCUIT, DIGITAL, RADIATION HARDENED ADVANCED CMOS, QUAD 2-INPUT NAND GATE WITH OPEN DRAIN, MONOLITHIC SILICON
A description is not available for this item.

References

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