NEN-ISO 17560
Surface chemical analysis - Secondary-ion mass spectrometry - Method for depth profiling of boron in silicon
active, Most Current
| Organization: | NEN |
| Publication Date: | 1 October 2014 |
| Status: | active |
| Page Count: | 21 |
| ICS Code (Chemical analysis): | 71.040.40 |
scope:
NEN-ISO 17560 specifies a secondary-ion mass spectrometric method using magnetic-sector or quadrupole mass spectrometers for depth profiling of boron in silicon, and using stylus profilometry or optical interferometry for depth scale calibration. This method is applicable to single-crystal, polycrystal, or amorphous silicon specimens with boron atomic concentrations between 1 × 1016 atoms/cm3 and 1 × 1020 atoms/cm3, and to crater depths of 50 nm or deeper.
Document History
NEN-ISO 17560
October 1, 2014
Surface chemical analysis - Secondary-ion mass spectrometry - Method for depth profiling of boron in silicon
NEN-ISO 17560 specifies a secondary-ion mass spectrometric method using magnetic-sector or quadrupole mass spectrometers for depth profiling of boron in silicon, and using stylus profilometry or...
August 1, 2002
Surface chemical analysis - Secondary-ion mass spectrometry - Method for depth profiling of boron in silicon
This International Standard specifies a secondary-ion mass spectrometric method using magnetic-sector or quadrupole mass spectrometers for depth profiling of boron in silicon, and using stylus...