NEN-ISO 17560
Surface chemical analysis - Secondary-ion mass spectrometry - Method for depth profiling of boron in silicon
inactive
| Organization: | NEN |
| Publication Date: | 1 August 2002 |
| Status: | inactive |
| Page Count: | 22 |
| ICS Code (Chemical analysis): | 71.040.40 |
scope:
This International Standard specifies a secondary-ion mass spectrometric method using magnetic-sector or quadrupole mass spectrometers for depth profiling of boron in silicon, and using stylus profilometry or optical interferometry for depth scale calibration. This method is applicable to single-crystal, poly-crystal or amorphous-silicon specimens with boron atomic concentrations between 1 .10 16 atoms/cm 3 and 1 .10 20 atoms/cm 3 , and to crater depths of 50 nm or deeper.
Document History
October 1, 2014
Surface chemical analysis - Secondary-ion mass spectrometry - Method for depth profiling of boron in silicon
NEN-ISO 17560 specifies a secondary-ion mass spectrometric method using magnetic-sector or quadrupole mass spectrometers for depth profiling of boron in silicon, and using stylus profilometry or...
NEN-ISO 17560
August 1, 2002
Surface chemical analysis - Secondary-ion mass spectrometry - Method for depth profiling of boron in silicon
This International Standard specifies a secondary-ion mass spectrometric method using magnetic-sector or quadrupole mass spectrometers for depth profiling of boron in silicon, and using stylus...