NEN-EN-IEC 62374-1/C11
Semiconductor devices - Part 1: Time-dependent dielectric breakdown (TDDB) test for inter-metal layers
active, Most Current
| Organization: | NEN |
| Publication Date: | 1 April 2011 |
| Status: | active |
| Page Count: | 3 |
| ICS Code (Semiconductor devices): | 31.080 |
Document History
NEN-EN-IEC 62374-1/C11
April 1, 2011
Semiconductor devices - Part 1: Time-dependent dielectric breakdown (TDDB) test for inter-metal layers
A description is not available for this item.
December 1, 2010
Semiconductor devices - Part 1: Time-dependent dielectric breakdown (TDDB) test for inter-metal layers
This part of IEC 62374 describes a test method, test structure and lifetime estimation method of the time-dependent dielectric breakdown (TDDB) test for inter-metal layers applied in semiconductor...