NEN-IEC 60747-9/A1
Semiconductor devices - Discrete devices - Part 9: Insulated-gate bipolar transistors (IGBTs)
inactive
| Organization: | NEN |
| Publication Date: | 1 September 2001 |
| Status: | inactive |
| Page Count: | 82 |
| ICS Code (Semiconductor devices in general): | 31.080.01 |
Document History
November 1, 2019
Semiconductor devices - Part 9: Discrete devices - Insulated-gate bipolar transistors (IGBTs)
This part of IEC 60747 specifies product specific standards for terminology, letter symbols, essential ratings and characteristics, verification of ratings and methods of measurement for...
October 1, 2007
Semiconductor devices - Discrete devices - Part 9: Insulated-gate bipolar transistors (IGBTs)
This part of IEC 60747 gives product specific standards for terminology, letter symbols, essential ratings and characteristics, verification of ratings and methods of measurement for insulated-gate...
NEN-IEC 60747-9/A1
September 1, 2001
Semiconductor devices - Discrete devices - Part 9: Insulated-gate bipolar transistors (IGBTs)
A description is not available for this item.
February 1, 1999
Semiconductor devices - Discrete devices - Part 9: Insulated-gate bipolar transistors (IGBTs)
Gives product specific standards for terminology, letter symbols, essential ratings and characteristics and measuring methods for insulted-gate bipolar transistors (IGBTs).