NEN-IEC 60747-9
Semiconductor devices - Discrete devices - Part 9: Insulated-gate bipolar transistors (IGBTs)
inactive
| Organization: | NEN |
| Publication Date: | 1 October 2007 |
| Status: | inactive |
| Page Count: | 64 |
| ICS Code (Transistors): | 31.080.30 |
| ICS Code (Semiconductor devices in general): | 31.080.01 |
scope:
This part of IEC 60747 gives product specific standards for terminology, letter symbols, essential ratings and characteristics, verification of ratings and methods of measurement for insulated-gate bipolar transistors (IGBTs).
Document History
November 1, 2019
Semiconductor devices - Part 9: Discrete devices - Insulated-gate bipolar transistors (IGBTs)
This part of IEC 60747 specifies product specific standards for terminology, letter symbols, essential ratings and characteristics, verification of ratings and methods of measurement for...
NEN-IEC 60747-9
October 1, 2007
Semiconductor devices - Discrete devices - Part 9: Insulated-gate bipolar transistors (IGBTs)
This part of IEC 60747 gives product specific standards for terminology, letter symbols, essential ratings and characteristics, verification of ratings and methods of measurement for insulated-gate...
September 1, 2001
Semiconductor devices - Discrete devices - Part 9: Insulated-gate bipolar transistors (IGBTs)
A description is not available for this item.
February 1, 1999
Semiconductor devices - Discrete devices - Part 9: Insulated-gate bipolar transistors (IGBTs)
Gives product specific standards for terminology, letter symbols, essential ratings and characteristics and measuring methods for insulted-gate bipolar transistors (IGBTs).