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DLA - SMD-5962-88525 REV B

MICROCIRCUIT, MEMORY, DIGITAL, CMOS 32K X 8 EEPROM, MONOLITHIC SILICON

inactive
Organization: DLA
Publication Date: 21 July 1993
Status: inactive
Page Count: 28
scope:

This drawing describes device requirements for class B microcircuits in accordance with 1.2.1 of MIL-STD-883, "Provisions for the use of MIL-STD-883 in conjunction with compliant non-JAN devices".

The complete PIN shall be as shown in the following example:

The device type(s) shall identify the circuit function as follows:

Access Write Write End of Write Software data Device type Generic number Circuit function time speed mode Indicator Endurance protect 01 See 6.6 (32K × 8 EEPROM) 350 ns 10 ms byte/page [D bar][A bar][T bar][A bar] polling 10,000 cycles No 02 300 ns 10 ms byte/page [D bar][A bar][T bar][A bar] polling 10,000 cycles No 03 250 ns 10 ms byte/page [D bar][A bar][T bar][A bar] polling 10,000 cycles No 04 200 ns 10 ms byte/page [D bar][A bar][T bar][A bar] polling 10,000 cycles No 05 250 ns 10 ms byte/page [D bar][A bar][T bar][A bar] polling 100,000 cycles No 06 150 ns 10 ms byte/page [D bar][A bar][T bar][A bar] polling 10,000 cycles No 07 150 ns 3 ms byte/page [D bar][A bar][T bar][A bar] polling 10,000 cycles No 08 150 ns 10 ms byte/page [D bar][A bar][T bar][A bar] polling 100,000 cycles No 09 350 ns 10 ms byte/page [D bar][A bar][T bar][A bar] polling 10,000 cycles Yes 10 300 ns 10 ms byte/page [D bar][A bar][T bar][A bar] polling 10,000 cycles Yes 11 250 ns 10 ms byte/page [D bar][A bar][T bar][A bar] polling 10,000 cycles Yes 12 200 ns 10 ms byte/page [D bar][A bar][T bar][A bar] polling 10,000 cycles Yes 13 250 ns 10 ms byte/page [D bar][A bar][T bar][A bar] polling 100,000 cycles Yes 14 150 ns 10 ms byte/page [D bar][A bar][T bar][A bar] polling 10,000 cycles Yes 15 150 ns 3 ms byte/page [D bar][A bar][T bar][A bar] polling 10,000 cycles Yes 16 150 ns 10 ms byte/page [D bar][A bar][T bar][A bar] polling 100,000 cycles Yes

The case outline(s) shall be as designated in MIL-STD-1835 and as follows:

Outline letter Descriptive designator Terminals Package style U See figure 1 28 Grid array X GDIPI-T28 or CDIP2-T28 28 Dual-in-line Y CQCC1-N32 32 Rectangular leadless chip carrier Z CDFP4-F28 28 Flat package

The lead finish shall be as specified in MIL-M-38510. Finish letter "X" shall not be marked on the microcircuit or its packaging. The "X" designation is for use in specifications when lead finishes A, B, and C are considered acceptable and interchangeable without preference.

Supply voltage range (VCC) ..................... −0.3 V dc to +6.25 V dc Storage temperature range ..................... −65°C to +150°C Maximum power dissipation (PD) ................. 1.0 W Lead temperature (soldering, 10 seconds) ...... +300°C Junction temperature (TJ) 2/ ................. +175°C Thermal resistance, junction-to-case (ΘJC) .... See MIL-STD-1835 Input voltage range (VIL, VIH) ................. −0.3 V dc to +6.25 V dc Data retention ................................. 20 years (minimum) Endurance: Types 01-04, 06, 07, 09-12, 14, 15 ........... 10,000 cycles/byte (minimum) Types 05, 08, 13, 16 .......................... 100,000 cycles/byte (minimum) Chip clear voltage (VH) ........................ 15.0 V dc

Supply voltage range (VCC) ............................ +4.5 V dc to +5.5 V dc Case operating temperature range (TC) ................. −55°C to +125°C Input voltage, low range (VIL) ........................ −0.1 V dc to +0.8 V dc Input voltage, high range (VIH) ....................... +2.0 V dc to VCC +0.3 V dc

intended Use:

Microcircuits conforming to this drawing are intended for use when military specifications do not exist and qualified military devices that will perform the required function are not available for... View More

Document History

February 9, 2018
MICROCIRCUIT, MEMORY, DIGITAL, CMOS 32K X 8 EEPROM, MONOLITHIC SILICON
Microcircuits conforming to this drawing are intended for use for Government microcircuit applications (original equipment), design applications, and logistics purposes.
December 16, 2011
MICROCIRCUIT, MEMORY, DIGITAL, CMOS 32K X 8 EEPROM, MONOLITHIC SILICON
Microcircuits conforming to this drawing are intended for use for Government microcircuit applications (original equipment), design applications, and logistics purposes.
April 15, 2005
MICROCIRCUIT, MEMORY, DIGITAL, CMOS 32K X 8 EEPROM, MONOLITHIC SILICON
Microcircuits conforming to this drawing are intended for use for Government microcircuit applications (original equipment), design applications, and logistics purposes.
February 14, 1995
MICROCIRCUIT, MEMORY, DIGITAL, CMOS 32K X 8 EEPROM, MONOLITHIC SILICON
A description is not available for this item.
SMD-5962-88525 REV B
July 21, 1993
MICROCIRCUIT, MEMORY, DIGITAL, CMOS 32K X 8 EEPROM, MONOLITHIC SILICON
This drawing describes device requirements for class B microcircuits in accordance with 1.2.1 of MIL-STD-883, "Provisions for the use of MIL-STD-883 in conjunction with compliant non-JAN devices"....
January 27, 1992
MICROCIRCUIT, MEMORY, DIGITAL, CMOS 32K X 8 EEPROM, MONOLITHIC SILICON
A description is not available for this item.
August 29, 1988
MICROCIRCUIT, MEMORY, DIGITAL, CMOS 32K X 8 EEPROM, MONOLITHIC SILICON
A description is not available for this item.

References

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