NPFC - MIL-PRF-19500/683
SEMICONDUCTOR DEVICE, TRANSISTOR, FIELD EFFECT, N-CHANNEL, RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TYPE 2N7467U2, JANTXVR, F, G, AND H AND JANSR, F, G, AND H
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| Organization: | NPFC |
| Publication Date: | 11 April 2008 |
| Status: | inactive |
| Page Count: | 18 |
scope:
This specification covers the performance requirements for an N-channel, enhancement-mode power MOSFET transistor with radiation hardened total dose and single event (SEE) effects ratings, with avalanche energy maximum rating (EAS) and maximum avalanche current (IAS). Two levels of product assurance are provided for each device type as specified in MIL-PRF-19500. See 6.5 for JANHC and JANKC die versions.
intended Use:
Semiconductors conforming to this specification are intended for original equipment design applications and logistic support of existing equipment.
Document History
November 18, 2021
TRANSISTOR, FIELD EFFECT, N-CHANNEL, RADIATION HARDENED, ENCAPSULATED (SURFACE MOUNT AND CARRIER BOARD PACKAGES), TYPE 2N7467, JANTXVR, F, G, AND H AND JANSR, F, G, AND H
A description is not available for this item.
October 22, 2021
TRANSISTOR, FIELD EFFECT, N-CHANNEL, RADIATION HARDENED, ENCAPSULATED (SURFACE MOUNT AND CARRIER BOARD PACKAGES), TYPE 2N7467, JANTXVR, F, G, AND H AND JANSR, F, G, AND H
Scope.
This specification covers the performance requirements for an N-channel, enhancement-mode power MOSFET transistor with radiation hardened total dose and single event (SEE) effects ratings,...
April 8, 2020
TRANSISTOR, FIELD EFFECT, N-CHANNEL, RADIATION HARDENED, ENCAPSULATED (SURFACE MOUNT AND CARRIER BOARD PACKAGES), TYPE 2N7467, JANTXVR, F, G, AND H AND JANSR, F, G, AND H
Scope.
This specification covers the performance requirements for an N-channel, enhancement-mode power MOSFET transistor with radiation hardened total dose and single event (SEE) effects ratings,...
August 27, 2019
TRANSISTOR, FIELD EFFECT, N-CHANNEL, RADIATION HARDENED, ENCAPSULATED (SURFACE MOUNT AND CARRIER BOARD PACKAGES), TYPE 2N7467, JANTXVR, F, G, AND H AND JANSR, F, G, AND H
Scope.
This specification covers the performance requirements for an N-channel, enhancement-mode power MOSFET transistor with radiation hardened total dose and single event (SEE) effects ratings,...
December 10, 2018
TRANSISTOR, FIELD EFFECT, N-CHANNEL, RADIATION HARDENED, ENCAPSULATED (SURFACE MOUNT AND CARRIER BOARD PACKAGES), TYPE 2N7467, JANTXVR, F, G, AND H AND JANSR, F, G, AND H
This specification covers the performance requirements for an N-channel, enhancement-mode power MOSFET transistor with radiation hardened total dose and single event (SEE) effects ratings, with...
April 14, 2016
TRANSISTOR, FIELD EFFECT, N-CHANNEL, RADIATION HARDENED, ENCAPSULATED (SURFACE MOUNT PACKAGE), TYPE 2N7467, JANTXVR, F, G, AND H AND JANSR, F, G, AND H
This specification covers the performance requirements for an N-channel, enhancement-mode power MOSFET transistor with radiation hardened total dose and single event (SEE) effects ratings, with...
April 3, 2015
Semiconductor Device, Transistor, Field Effect, N-Channel, Radiation Hardened (Total Dose and Single Event Effects) Type 2N7467U2, JANTXVR, F, G, and H and JANSR, F, G, and H
A description is not available for this item.
June 25, 2010
SEMICONDUCTOR DEVICE, TRANSISTOR, FIELD EFFECT, N-CHANNEL, RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TYPE 2N7467U2, JANTXVR, F, G, AND H AND JANSR, F, G, AND H
This specification covers the performance requirements for an N-channel, enhancement-mode power MOSFET transistor with radiation hardened total dose and single event (SEE) effects ratings, with...
November 5, 2009
SEMICONDUCTOR DEVICE, TRANSISTOR, FIELD EFFECT, N-CHANNEL, RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TYPE 2N7467U2, JANTXVR, F, G, AND H AND JANSR, F, G, AND H
This specification covers the performance requirements for an N-channel, enhancement-mode power MOSFET transistor with radiation hardened total dose and single event (SEE) effects ratings, with...
MIL-PRF-19500/683
April 11, 2008
SEMICONDUCTOR DEVICE, TRANSISTOR, FIELD EFFECT, N-CHANNEL, RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TYPE 2N7467U2, JANTXVR, F, G, AND H AND JANSR, F, G, AND H
This specification covers the performance requirements for an N-channel, enhancement-mode power MOSFET transistor with radiation hardened total dose and single event (SEE) effects ratings, with...
December 23, 2004
SEMICONDUCTOR DEVICE, TRANSISTOR, FIELD EFFECT, N-CHANNEL, RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TYPE 2N7467U2, JANTXVR, F, G, AND H AND JANSR, F, G, AND H
This specification covers the performance requirements for an N-channel, enhancement-mode power MOSFET transistor with radiation hardened total dose and single event (SEE) effects ratings, with...
October 27, 2003
SEMICONDUCTOR DEVICE, TRANSISTOR, FIELD EFFECT, N-CHANNEL, RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TYPE 2N7467U2, JANTXVR, F, G, AND H AND JANSR, F, G, AND H
This specification covers the performance requirements for an N-channel, enhancement-mode power MOSFET transistor with radiation hardened total dose and single event (SEE) effects ratings, with...
November 18, 2002
SEMICONDUCTOR DEVICE, TRANSISTOR, FIELD EFFECT, N-CHANNEL, RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TYPE 2N7467U2, JANTXVR, F, G, AND H AND JANSR, F, G, AND H
A description is not available for this item.
February 22, 2002
SEMICONDUCTOR DEVICE, TRANSISTOR, FIELD EFFECT, N-CHANNEL, RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TYPE 2N7467U2, JANTXVR, F, G, AND H AND JANSR, F, G, AND H
A description is not available for this item.
March 9, 2001
SEMICONDUCTOR DEVICE, TRANSISTOR, FIELD EFFECT, N-CHANNEL, RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TYPE 2N7467U2, JANTXVR, F, G, AND H AND JANSR, F, G, AND H
This specification covers the performance requirements for an N-channel, enhancement-mode power MOSFET transistor with radiation hardened total dose and single event (SEE) effects ratings, with...