NPFC - MIL-PRF-19500/753
SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTOR, N-CHANNEL, SILICON, TYPES 2N7580T1, 2N7582T1, 2N7584T1, AND 2N7586T1, JANTXVR, JANTXVF, JANSR, AND JANSF
inactive
Buy Now
| Organization: | NPFC |
| Publication Date: | 5 June 2008 |
| Status: | inactive |
| Page Count: | 21 |
scope:
This specification covers the performance requirements for a N-channel, enhancement-mode, MOSFET, radiation hardened (total dose and single event effects (SEE)), power transistor. Two levels of product assurance are provided for each device type as specified in MIL-PRF-19500, with avalanche energy maximum rating (EAS) and maximum avalanche current (IAS).
intended Use:
Semiconductors conforming to this specification are intended for original equipment design applications and logistic support of existing equipment.
Document History
September 18, 2020
TRANSISTOR, FIELD EFFECT RADIATION HARDENED N-CHANNEL, SILICON, ENCAPSULATED (SURFACE MOUNT PACKAGE), TYPES 2N7580, 2N7582, 2N7584, AND 2N7586, JANTXV, AND JANS
Scope.
This specification covers the performance requirements for a N-channel, enhancement-mode, MOSFET, radiation hardened (total dose and single event effects (SEE)), power transistor. Two levels...
March 2, 2018
TRANSISTOR, FIELD EFFECT RADIATION HARDENED N-CHANNEL, SILICON, ENCAPSULATED (SURFACE MOUNT PACKAGE), TYPES 2N7580, 2N7582, 2N7584, AND 2N7586, JANTXV, AND JANS
This specification covers the performance requirements for a N-channel, enhancement-mode, MOSFET, radiation hardened (total dose and single event effects (SEE)), power transistor. Two levels of...
March 17, 2017
TRANSISTOR, FIELD EFFECT RADIATION HARDENED N-CHANNEL, SILICON, ENCAPSULATED (SURFACE MOUNT PACKAGE), TYPES 2N7580, 2N7582, 2N7584, AND 2N7586, JANTXV, AND JANS
This specification covers the performance requirements for a N-channel, enhancement-mode, MOSFET, radiation hardened (total dose and single event effects (SEE)), power transistor. Two levels of...
May 20, 2013
SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTOR, N-CHANNEL, SILICON, TYPES 2N7580T1, 2N7582T1, 2N7584T1, AND 2N7586T1, JANTXVR, JANTXVF, JANSR, AND JANSF
This specification covers the performance requirements for a N-channel, enhancement-mode, MOSFET, radiation hardened (total dose and single event effects (SEE)), power transistor. Two levels of...
May 19, 2010
SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTOR, N-CHANNEL, SILICON, TYPES 2N7580T1, 2N7582T1, 2N7584T1, AND 2N7586T1, JANTXVR, JANTXVF, JANSR, AND JANSF
This specification covers the performance requirements for a N-channel, enhancement-mode, MOSFET, radiation hardened (total dose and single event effects (SEE)), power transistor. Two levels of...
MIL-PRF-19500/753
June 5, 2008
SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTOR, N-CHANNEL, SILICON, TYPES 2N7580T1, 2N7582T1, 2N7584T1, AND 2N7586T1, JANTXVR, JANTXVF, JANSR, AND JANSF
This specification covers the performance requirements for a N-channel, enhancement-mode, MOSFET, radiation hardened (total dose and single event effects (SEE)), power transistor. Two levels of...