NPFC - MIL-PRF-19500/634
SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTORS, N-CHANNEL SILICON, TYPES 2N7405, 2N7406, 2N7407, AND 2N7408, JANSD AND JANSR
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| Organization: | NPFC |
| Publication Date: | 12 September 2008 |
| Status: | inactive |
| Page Count: | 25 |
scope:
This specification covers the performance requirements for a N-channel, enhancement-mode, MOSFET, radiation hardened (total dose and single event effect (SEE) characterization), power transistor intended for use in high density power switching applications. One level of product assurance is provided for each device type as specified in MIL-PRF-19500.
intended Use:
Semiconductors conforming to this specification are intended for original equipment design applications and logistic support of existing equipment.
Document History
October 29, 2019
TRANSISTOR, FIELD EFFECT, N-CHANNEL SILICON, FLANGE MOUNT PACKAGE, RADIATION HARDENED (TOTAL DOSE ONLY), TYPES 2N7405, 2N7406, 2N7407, AND 2N7408, QUALITY LEVELS JANSD AND JANSR
Scope.
This specification covers the performance requirements for a N-channel, enhancement-mode, MOSFET, radiation hardened (total dose only), power transistor intended for use in high density power...
November 7, 2018
Semiconductor Device, Field Effect Radiation Hardened Transistors, N-Channel Silicon, Types 2N7405, 2N7406, 2N7407, and 2N7408, JANSD and JANSR
A description is not available for this item.
September 12, 2008
SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTORS, N-CHANNEL SILICON, TYPES 2N7405, 2N7406, 2N7407, AND 2N7408, JANSD AND JANSR
This specification covers the performance requirements for a N-channel, enhancement-mode, MOSFET, radiation hardened power transistor intended for use in high density power switching applications....
MIL-PRF-19500/634
September 12, 2008
SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTORS, N-CHANNEL SILICON, TYPES 2N7405, 2N7406, 2N7407, AND 2N7408, JANSD AND JANSR
This specification covers the performance requirements for a N-channel, enhancement-mode, MOSFET, radiation hardened (total dose and single event effect (SEE) characterization), power transistor...
April 16, 2004
SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTORS, N-CHANNEL SILICON, TYPES 2N7405, 2N7406, 2N7407, AND 2N7408, JANSD AND JANSR
This specification covers the performance requirements for a N-channel, enhancement-mode, MOSFET, radiation hardened (total dose and single event effect (SEE) characterization), power transistor...
June 16, 2003
SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTORS, N-CHANNEL SILICON TYPES 2N7405, 2N7406, 2N7407, AND 2N7408 JANSD AND JANSR
A description is not available for this item.
September 2, 1998
SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTORS, N-CHANNEL SILICON TYPES 2N7405, 2N7406, 2N7407, AND 2N7408 JANSD AND JANSR
This specification covers the performance requirements for a N-Channel, enhancement-mode, MOSFET, radiation hardened (Total Dose and Single Event characterization - see figure 4), power transistor...
November 29, 1996
SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTORS, N-CHANNEL SILICON TYPES 2N7405, 2N7406, 2N7407, AND 2N7408 JANTXD, -R, JANTXVD, -R, AND JANSD, -R
This specification covers the performance requirements for a N-Channel, enhancement-mode, MOSFET, radiation hardened (Total Dose and Single Event characterization - see figure 4), power transistor...