NPFC - MIL-PRF-19500/634
SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTORS, N-CHANNEL SILICON, TYPES 2N7405, 2N7406, 2N7407, AND 2N7408, JANSD AND JANSR
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| Organization: | NPFC |
| Publication Date: | 12 September 2008 |
| Status: | inactive |
| Page Count: | 22 |
scope:
This specification covers the performance requirements for a N-channel, enhancement-mode, MOSFET, radiation hardened power transistor intended for use in high density power switching applications. One level of product assurance is provided for each device type as specified in MIL-PRF-19500.
intended Use:
Semiconductors conforming to this specification are intended for original equipment design applications and logistic support of existing equipment.
Document History
October 29, 2019
TRANSISTOR, FIELD EFFECT, N-CHANNEL SILICON, FLANGE MOUNT PACKAGE, RADIATION HARDENED (TOTAL DOSE ONLY), TYPES 2N7405, 2N7406, 2N7407, AND 2N7408, QUALITY LEVELS JANSD AND JANSR
Scope.
This specification covers the performance requirements for a N-channel, enhancement-mode, MOSFET, radiation hardened (total dose only), power transistor intended for use in high density power...
November 7, 2018
Semiconductor Device, Field Effect Radiation Hardened Transistors, N-Channel Silicon, Types 2N7405, 2N7406, 2N7407, and 2N7408, JANSD and JANSR
A description is not available for this item.
MIL-PRF-19500/634
September 12, 2008
SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTORS, N-CHANNEL SILICON, TYPES 2N7405, 2N7406, 2N7407, AND 2N7408, JANSD AND JANSR
This specification covers the performance requirements for a N-channel, enhancement-mode, MOSFET, radiation hardened power transistor intended for use in high density power switching applications....
September 12, 2008
SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTORS, N-CHANNEL SILICON, TYPES 2N7405, 2N7406, 2N7407, AND 2N7408, JANSD AND JANSR
This specification covers the performance requirements for a N-channel, enhancement-mode, MOSFET, radiation hardened (total dose and single event effect (SEE) characterization), power transistor...
April 16, 2004
SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTORS, N-CHANNEL SILICON, TYPES 2N7405, 2N7406, 2N7407, AND 2N7408, JANSD AND JANSR
This specification covers the performance requirements for a N-channel, enhancement-mode, MOSFET, radiation hardened (total dose and single event effect (SEE) characterization), power transistor...
June 16, 2003
SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTORS, N-CHANNEL SILICON TYPES 2N7405, 2N7406, 2N7407, AND 2N7408 JANSD AND JANSR
A description is not available for this item.
September 2, 1998
SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTORS, N-CHANNEL SILICON TYPES 2N7405, 2N7406, 2N7407, AND 2N7408 JANSD AND JANSR
This specification covers the performance requirements for a N-Channel, enhancement-mode, MOSFET, radiation hardened (Total Dose and Single Event characterization - see figure 4), power transistor...
November 29, 1996
SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTORS, N-CHANNEL SILICON TYPES 2N7405, 2N7406, 2N7407, AND 2N7408 JANTXD, -R, JANTXVD, -R, AND JANSD, -R
This specification covers the performance requirements for a N-Channel, enhancement-mode, MOSFET, radiation hardened (Total Dose and Single Event characterization - see figure 4), power transistor...