DLA - DSCC-VID-V62/03604 REV A
MICROCIRCUIT, DIGITAL, ADVANCED HIGH SPEED CMOS, QUADRUPLE 2-INPUT POSITIVE NAND GATE, MONOLITHIC SILICON
inactive
| Organization: | DLA |
| Publication Date: | 17 February 2009 |
| Status: | inactive |
| Page Count: | 11 |
scope:
This drawing documents the general requirements of a high performance quadruple 2-input positive NAND gate microcircuit, with an operating temperature range of -55°C to +125°C.
Document History
March 22, 2022
MICROCIRCUIT, DIGITAL, ADVANCED HIGH SPEED CMOS, QUADRUPLE 2-INPUT POSITIVE NAND GATE, MONOLITHIC SILICON
Scope.
This drawing documents the general requirements of a high performance quadruple 2-input positive NAND gate microcircuit, with an operating temperature range of -55ºC to +125ºC.
July 28, 2015
MICROCIRCUIT, DIGITAL, ADVANCED HIGH SPEED CMOS, QUADRUPLE 2-INPUT POSITIVE NAND GATE, MONOLITHIC SILICON
This drawing documents the general requirements of a high performance quadruple 2-input positive NAND gate microcircuit, with an operating temperature range of -55°C to +125°C.
DSCC-VID-V62/03604 REV A
February 17, 2009
MICROCIRCUIT, DIGITAL, ADVANCED HIGH SPEED CMOS, QUADRUPLE 2-INPUT POSITIVE NAND GATE, MONOLITHIC SILICON
This drawing documents the general requirements of a high performance quadruple 2-input positive NAND gate microcircuit, with an operating temperature range of -55°C to +125°C.
November 7, 2002
MICROCIRCUIT, DIGITAL, ADVANCED HIGH SPEED CMOS, QUADRUPLE 2-INPUT POSITIVE NAND GATE, MONOLITHIC SILICON
A description is not available for this item.