DLA - SMD-5962-82007 REV B
MICROCIRCUIT, MEMORY, DIGITAL, NMOS 16K (16,384 X 1) BIT STATIC RANDOM ACCESS MEMORY (SRAM), MONOLITHIC SILICON
inactive
| Organization: | DLA |
| Publication Date: | 7 October 1988 |
| Status: | inactive |
| Page Count: | 13 |
Document History
April 15, 2018
MICROCIRCUIT, MEMORY, DIGITAL, NMOS 16K (16,384 X 1) BIT STATIC RANDOM ACCESS MEMORY (SRAM), MONOLITHIC SILICON
Microcircuits conforming to this drawing are intended for use for Government microcircuit applications (original equipment), design applications, and logistics purposes.
August 23, 2012
MICROCIRCUIT, MEMORY, DIGITAL, NMOS 16K (16,384 X 1) BIT STATIC RANDOM ACCESS MEMORY (SRAM), MONOLITHIC SILICON
Microcircuits conforming to this drawing are intended for use for Government microcircuit applications (original equipment), design applications, and logistics purposes.
April 3, 2006
MICROCIRCUIT, MEMORY, DIGITAL, NMOS 16K (16,384 X 1) BIT STATIC RANDOM ACCESS MEMORY (SRAM), MONOLITHIC SILICON
Microcircuits conforming to this drawing are intended for use for Government microcircuit applications (original equipment), design applications, and logistics purposes.
SMD-5962-82007 REV B
October 7, 1988
MICROCIRCUIT, MEMORY, DIGITAL, NMOS 16K (16,384 X 1) BIT STATIC RANDOM ACCESS MEMORY (SRAM), MONOLITHIC SILICON
A description is not available for this item.