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DOD - SMD 5962-82007

MICROCIRCUIT, MEMORY, DIGITAL, NMOS 16K (16,384 X 1) BIT STATIC RANDOM ACCESS MEMORY (SRAM), MONOLITHIC SILICON

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Organization: DOD
Publication Date: 15 April 2018
Status: active
Page Count: 13
scope:

This drawing describes device requirements for MIL-STD-883 compliant, non-JAN class level B microcircuits in accordance with MIL-PRF-38535, appendix A.

intended Use:

Microcircuits conforming to this drawing are intended for use for Government microcircuit applications (original equipment), design applications, and logistics purposes.

Document History

SMD 5962-82007
April 15, 2018
MICROCIRCUIT, MEMORY, DIGITAL, NMOS 16K (16,384 X 1) BIT STATIC RANDOM ACCESS MEMORY (SRAM), MONOLITHIC SILICON
Microcircuits conforming to this drawing are intended for use for Government microcircuit applications (original equipment), design applications, and logistics purposes.
August 23, 2012
MICROCIRCUIT, MEMORY, DIGITAL, NMOS 16K (16,384 X 1) BIT STATIC RANDOM ACCESS MEMORY (SRAM), MONOLITHIC SILICON
Microcircuits conforming to this drawing are intended for use for Government microcircuit applications (original equipment), design applications, and logistics purposes.
April 3, 2006
MICROCIRCUIT, MEMORY, DIGITAL, NMOS 16K (16,384 X 1) BIT STATIC RANDOM ACCESS MEMORY (SRAM), MONOLITHIC SILICON
Microcircuits conforming to this drawing are intended for use for Government microcircuit applications (original equipment), design applications, and logistics purposes.  
October 7, 1988
MICROCIRCUIT, MEMORY, DIGITAL, NMOS 16K (16,384 X 1) BIT STATIC RANDOM ACCESS MEMORY (SRAM), MONOLITHIC SILICON
A description is not available for this item.

References

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