DOD - SMD 5962-80012
MICROCIRCUITS, MEMORY, DIGITAL, NMOS 4K X 8 UV ERASABLE PROM, MONOLITHIC SILICON
inactive
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| Organization: | DOD |
| Publication Date: | 9 November 2010 |
| Status: | inactive |
| Page Count: | 22 |
scope:
This drawing describes device requirements for MIL-STD-883 compliant, non-JAN class level B microcircuits in accordance with MIL-PRF-38535, appendix A.
intended Use:
Microcircuits conforming to this drawing are intended for use for government microcircuit applications (original equipment), design applications, and logistics purposes.
Document History
September 18, 2017
MICROCIRCUITS, MEMORY, DIGITAL, NMOS 4K X 8 UV ERASABLE PROM, MONOLITHIC SILICON
Microcircuits conforming to this drawing are intended for use for government microcircuit applications (original equipment), design applications, and logistics purposes.
SMD 5962-80012
November 9, 2010
MICROCIRCUITS, MEMORY, DIGITAL, NMOS 4K X 8 UV ERASABLE PROM, MONOLITHIC SILICON
Microcircuits conforming to this drawing are intended for use for government microcircuit applications (original equipment), design applications, and logistics purposes.
February 10, 2005
MICROCIRCUITS, MEMORY, DIGITAL, NMOS 4K X 8 UV ERASABLE PROM, MONOLITHIC SILICON
Microcircuits conforming to this drawing are intended for use for government microcircuit applications (original equipment), design applications, and logistics purposes.
May 23, 1988
MICROCIRCUITS, MEMORY, DIGITAL, NMOS 4K X 8 UV ERASABLE PROM, MONOLITHIC SILICON
A description is not available for this item.