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NPFC - MIL-PRF-19500/476

TRANSISTOR, FIELD EFFECT, P-CHANNEL, SILICON, TYPES 2N5114 THROUGH 2N5116, JAN, JANTX, AND JANTXV

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Organization: NPFC
Publication Date: 12 September 2018
Status: active
Page Count: 14
scope:

This specification covers the performance requirements for P-channel, junction, silicon field-effect transistors. Three levels of product assurance (JAN, JANTX, and JANTXV) are provided for each encapsulated device.

intended Use:

Semiconductors conforming to this specification are intended for original equipment design applications and logistic support of existing equipment.

Document History

MIL-PRF-19500/476
September 12, 2018
TRANSISTOR, FIELD EFFECT, P-CHANNEL, SILICON, TYPES 2N5114 THROUGH 2N5116, JAN, JANTX, AND JANTXV
This specification covers the performance requirements for P-channel, junction, silicon field-effect transistors. Three levels of product assurance (JAN, JANTX, and JANTXV) are provided for each...
December 13, 2013
SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTORS, P-CHANNEL, SILICON, TYPES 2N5114 THROUGH 2N5116 AND 2N5114UB THROUGH 2N5116UB, JAN, JANTX, AND JANTXV
This specification covers the performance requirements for P-channel, junction, silicon field-effect transistors. Three levels of product assurance are provided for each device type as specified in...
January 23, 2012
SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTORS, P-CHANNEL, SILICON, TYPES 2N5114 THROUGH 2N5116 AND 2N5114UB THROUGH 2N5116UB, JAN, JANTX, AND JANTXV
This specification covers the performance requirements for P-channel, junction, silicon field-effect transistors. Three levels of product assurance are provided for each device type as specified in...
January 9, 2007
SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTORS, P-CHANNEL, SILICON, TYPES 2N5114 THROUGH 2N5116 AND 2N5114UB THROUGH 2N5116UB, JAN, JANTX, AND JANTXV
This specification covers the performance requirements for P-channel, junction, silicon field-effect transistors. Three levels of product assurance are provided for each device type as specified in...
April 9, 2003
SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTORS, P-CHANNEL, SILICON TYPES 2N5114 THROUGH 2N5116 AND 2N5114UB THROUGH 2N5116UB JAN, JANTX, AND JANTXV
This specification covers the performance requirements for P-channel, junction, silicon field-effect transistors. Three levels of product assurance are provided for each device type as specified in...
October 15, 2001
SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTORS, P-CHANNEL, SILICON TYPES 2N5114 THROUGH 2N5116 AND 2N5114UB THROUGH 2N5116UB JAN, JANTX, AND JANTXV
This specification covers the performance requirements for P-channel, junction, silicon field-effect transistors. Three levels of product assurance are provided for each device type as specified in...
May 23, 2001
SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTORS, P-CHANNEL, SILICON TYPES 2N5114 THROUGH 2N5116 AND 2N5114UB THROUGH 2N5116UB JAN, JANTX, AND JANTXV
A description is not available for this item.
August 6, 1999
SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTORS, P-CHANNEL, SILICON TYPES 2N5114 THROUGH 2N5116 AND 2N5114UB THROUGH 2N5116UB JAN, JANTX, AND JANTXV
This specification covers the performance requirements for P-channel, junction, silicon field-effect transistors. Three levels of product assurance are provided for each device type as specified in...
August 17, 1987
SEMICONDUCTOR DEVICE, FIELD-EFFECT TRANSISTOR, P-CHANNEL, SILICON TYPES 2N5114 THROUGH 2N5116 AND TX2N5114 THROUGH TX2N5116
A description is not available for this item.
January 13, 1975
SEMICONDUCTOR DEVICE, FIELD-EFFECT TRANSISTOR, P-CHANNEL, SILICON TYPES 2N5114 THROUGH 2N5116 AND TX2N5114 THROUGH TXZN5116
A description is not available for this item.
April 18, 1973
SEMICONDUCTOR DEVICE, FIELD-EFFECT TRANSISTOR, P-CHANNEL, SILICON TYPES 2N5114 THROUGH 2N5116 AND TX2N5114 THROUGH TX2N5116
A description is not available for this item.
November 20, 1972
SEMICONDUCTOR DEVICE, FIELD-EFFECT TRANSISTOR, P-CHANNEL, SILICON TYPES 2N5114 THROUGH 2N5116 AND TX2N5114 THROUGH TX2N5116
This specification covers the detail requirements for P-Channel Silicon field-effect transistors for use in chopper and analog switch and commutator applications. The prefix "TX" is used on devices...

References

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