NPFC - MIL-S-19500/476
SEMICONDUCTOR DEVICE, FIELD-EFFECT TRANSISTOR, P-CHANNEL, SILICON TYPES 2N5114 THROUGH 2N5116 AND TX2N5114 THROUGH TX2N5116
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| Organization: | NPFC |
| Publication Date: | 20 November 1972 |
| Status: | inactive |
| Page Count: | 11 |
scope:
This specification covers the detail requirements for P-Channel Silicon field-effect transistors for use in chopper and analog switch and commutator applications. The prefix "TX" is used on devices submitted to and passing the special process conditioning, testing, and screening tests specified in 4.5 through 4.5.8.1.
See figure 1 (TO-18).
Document History
November 20, 2023
TRANSISTOR, FIELD EFFECT, P-CHANNEL, SILICON, TYPES 2N5114 THROUGH 2N5116, JAN, JANTX, AND JANTXV
A description is not available for this item.
September 12, 2018
TRANSISTOR, FIELD EFFECT, P-CHANNEL, SILICON, TYPES 2N5114 THROUGH 2N5116, JAN, JANTX, AND JANTXV
This specification covers the performance requirements for P-channel, junction, silicon field-effect transistors. Three levels of product assurance (JAN, JANTX, and JANTXV) are provided for each...
December 13, 2013
SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTORS, P-CHANNEL, SILICON, TYPES 2N5114 THROUGH 2N5116 AND 2N5114UB THROUGH 2N5116UB, JAN, JANTX, AND JANTXV
This specification covers the performance requirements for P-channel, junction, silicon field-effect transistors. Three levels of product assurance are provided for each device type as specified in...
January 23, 2012
SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTORS, P-CHANNEL, SILICON, TYPES 2N5114 THROUGH 2N5116 AND 2N5114UB THROUGH 2N5116UB, JAN, JANTX, AND JANTXV
This specification covers the performance requirements for P-channel, junction, silicon field-effect transistors. Three levels of product assurance are provided for each device type as specified in...
January 9, 2007
SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTORS, P-CHANNEL, SILICON, TYPES 2N5114 THROUGH 2N5116 AND 2N5114UB THROUGH 2N5116UB, JAN, JANTX, AND JANTXV
This specification covers the performance requirements for P-channel, junction, silicon field-effect transistors. Three levels of product assurance are provided for each device type as specified in...
April 9, 2003
SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTORS, P-CHANNEL, SILICON TYPES 2N5114 THROUGH 2N5116 AND 2N5114UB THROUGH 2N5116UB JAN, JANTX, AND JANTXV
This specification covers the performance requirements for P-channel, junction, silicon field-effect transistors. Three levels of product assurance are provided for each device type as specified in...
October 15, 2001
SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTORS, P-CHANNEL, SILICON TYPES 2N5114 THROUGH 2N5116 AND 2N5114UB THROUGH 2N5116UB JAN, JANTX, AND JANTXV
This specification covers the performance requirements for P-channel, junction, silicon field-effect transistors. Three levels of product assurance are provided for each device type as specified in...
May 23, 2001
SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTORS, P-CHANNEL, SILICON TYPES 2N5114 THROUGH 2N5116 AND 2N5114UB THROUGH 2N5116UB JAN, JANTX, AND JANTXV
A description is not available for this item.
August 6, 1999
SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTORS, P-CHANNEL, SILICON TYPES 2N5114 THROUGH 2N5116 AND 2N5114UB THROUGH 2N5116UB JAN, JANTX, AND JANTXV
This specification covers the performance requirements for P-channel, junction, silicon field-effect transistors. Three levels of product assurance are provided for each device type as specified in...
August 17, 1987
SEMICONDUCTOR DEVICE, FIELD-EFFECT TRANSISTOR, P-CHANNEL, SILICON TYPES 2N5114 THROUGH 2N5116 AND TX2N5114 THROUGH TX2N5116
A description is not available for this item.
January 13, 1975
SEMICONDUCTOR DEVICE, FIELD-EFFECT TRANSISTOR, P-CHANNEL, SILICON TYPES 2N5114 THROUGH 2N5116 AND TX2N5114 THROUGH TXZN5116
A description is not available for this item.
April 18, 1973
SEMICONDUCTOR DEVICE, FIELD-EFFECT TRANSISTOR, P-CHANNEL, SILICON TYPES 2N5114 THROUGH 2N5116 AND TX2N5114 THROUGH TX2N5116
A description is not available for this item.
MIL-S-19500/476
November 20, 1972
SEMICONDUCTOR DEVICE, FIELD-EFFECT TRANSISTOR, P-CHANNEL, SILICON TYPES 2N5114 THROUGH 2N5116 AND TX2N5114 THROUGH TX2N5116
This specification covers the detail requirements for P-Channel Silicon field-effect transistors for use in chopper and analog switch and commutator applications. The prefix "TX" is used on devices...