DOD - SMD 5962-85102
MICROCIRCUITS, MEMORY, DIGITAL, CMOS, 8K x 8 UV ERASABLE PROM, MONOLITHIC SILICON
inactive
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| Organization: | DOD |
| Publication Date: | 3 March 2011 |
| Status: | inactive |
| Page Count: | 14 |
scope:
This drawing describes device requirements for MIL-STD-883 compliant, non-JAN class level B microcircuits in accordance with MIL-PRF-38535, appendix A.
intended Use:
Microcircuits conforming to this drawing are intended for use for government microcircuit applications (original equipment), design applications, and logistics purposes.
Document History
December 6, 2017
MICROCIRCUITS, MEMORY, DIGITAL, CMOS, 8K x 8 UV ERASABLE PROM, MONOLITHIC SILICON
Microcircuits conforming to this drawing are intended for use for government microcircuit applications (original equipment), design applications, and logistics purposes.
SMD 5962-85102
March 3, 2011
MICROCIRCUITS, MEMORY, DIGITAL, CMOS, 8K x 8 UV ERASABLE PROM, MONOLITHIC SILICON
Microcircuits conforming to this drawing are intended for use for government microcircuit applications (original equipment), design applications, and logistics purposes.
March 28, 2005
MICROCIRCUITS, MEMORY, DIGITAL, CMOS, 8K X 8 UV ERASABLE PROM, MONOLITHIC SILICON
Microcircuits conforming to this drawing are intended for use for government microcircuit applications (original equipment), design applications, and logistics purposes.
June 23, 2000
MICROCIRCUITS, MEMORY, DIGITAL, CMOS, 8K X 8 UV ERASABLE PROM, MONOLITHIC SILICON
Microcircuits conforming to this drawing are intended for use for government microcircuit applications (original equipment), design applications, and logistics purposes.
October 30, 1989
MICROCIRCUITS, MEMORY, DIGITAL, CMOS, 8K X 8 UV ERASABLE PROM, MONOLITHIC SILICON
A description is not available for this item.