NPFC - MIL-PRF-19500/744

TRANSISTOR, FIELD EFFECT, N-CHANNEL, RADIATION HARDENED, LOGIC-LEVEL SILICON, ENCAPSULATED (SURFACE MOUNT PACKAGE), TYPES 2N7616, QUALITY LEVELS JANTXV AND JANS

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Organization: NPFC
Publication Date: 23 October 2018
Status: active
Page Count: 21
scope:

This specification covers the performance requirements for a N-channel, enhancement-mode, radiation hardened (total dose and single event effects (SEE)), low-threshold logic level, MOSFET, transistor. Two levels of product assurance (JANTXV and JANS) are provided for each encapsulated device with avalanche energy maximum rating (EAS) and maximum avalanche current (IAS). Provisions for radiation hardness assurance (RHA) to two radiation levels ("R" and "F") are provided for JANTXV and JANS product assurance levels. See 6.7 for JANHC and JANKC die versions.

intended Use:

Semiconductors conforming to this specification are intended for original equipment design applications and logistic support of existing equipment.

Document History

MIL-PRF-19500/744
October 23, 2018
TRANSISTOR, FIELD EFFECT, N-CHANNEL, RADIATION HARDENED, LOGIC-LEVEL SILICON, ENCAPSULATED (SURFACE MOUNT PACKAGE), TYPES 2N7616, QUALITY LEVELS JANTXV AND JANS
This specification covers the performance requirements for a N-channel, enhancement-mode, radiation hardened (total dose and single event effects (SEE)), low-threshold logic level, MOSFET,...
June 28, 2017
TRANSISTOR, FIELD EFFECT, N-CHANNEL, RADIATION HARDENED, LOGIC-LEVEL SILICON, ENCAPSULATED (SURFACE MOUNT PACKAGE), TYPES 2N7616, QUALITY LEVELS JANTXV AND JANS
This specification covers the performance requirements for a N-channel, enhancement-mode, radiation hardened (total dose and single event effects (SEE)), low-threshold logic level, MOSFET,...
February 25, 2016
TRANSISTOR, FIELD EFFECT, N-CHANNEL, RADIATION HARDENED, LOGIC-LEVEL SILICON, ENCAPSULATED (SURFACE MOUNT PACKAGE), TYPES 2N7616, QUALITY LEVELS JANTXV AND JANS
This specification covers the performance requirements for a N-channel, enhancement-mode, radiation hardened (total dose and single event effects (SEE)), low-threshold logic level, MOSFET,...
January 4, 2013
SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTOR, N-CHANNEL, RADIATION HARDENED, LOGIC-LEVEL SILICON, TYPES 2N7616UB, 2N7616UBC, 2N7616UBN, 2N7616UBCN, JANTXVR, JANTXVF, JANSR, AND JANSF
This specification covers the performance requirements for a N-channel, enhancement-mode, radiation hardened, low-threshold logic level, MOSFET, transistor. Two levels of product assurance are...
May 1, 2012
SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTOR, N-CHANNEL, RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS), LOGIC-LEVEL SILICON, TYPES 2N7616UB, 2N7616UBC, 2N7616UBN, 2N7616UBCN, JANTXVR, JANTXVF, JANSR, AND JANSF
This specification covers the performance requirements for a N-channel, enhancement-mode, radiation hardened (total dose and single event effects (SEE)), low-threshold logic level, MOSFET,...
May 9, 2011
SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTOR, N-CHANNEL, RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS), LOGIC-LEVEL SILICON, TYPES 2N7616UB, 2N7616UBC, 2N7616UBN, 2N7616UBCN, JANTXVR, JANTXVF, JANSR, AND JANSF
This specification covers the performance requirements for a N-channel, enhancement-mode, radiation hardened (total dose and single event effects (SEE)), low-threshold logic level, MOSFET,...
February 4, 2010
SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTOR, N-CHANNEL, RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS), LOGIC-LEVEL SILICON, TYPES 2N7616UB, 2N7616UBC, 2N7616UBN, 2N7616UBCN, JANTXVR, JANTXVF, JANSR, AND JANSF
This specification covers the performance requirements for a N-channel, enhancement-mode, radiation hardened (total dose and single event effects (SEE)), low-threshold logic level, MOSFET,...
May 21, 2008
SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTOR, N-CHANNEL, RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS), LOGIC-LEVEL SILICON, TYPES 2N7616UB, 2N7616UBC, JANTXVR, JANTXVF, JANSR, AND JANSF
This specification covers the performance requirements for a N-channel, enhancement-mode, radiation hardened (total dose and single event effects (SEE)), low-threshold logic level, MOSFET,...

References

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