NPFC - MIL-PRF-19500/673

TRANSISTOR, FIELD EFFECT, RADIATION HARDENED N-CHANNEL, SILICON, ENCAPSULATED (SURFACE MOUNT AND CARRIER BOARD PACKAGES), TYPES 2N7468 AND 2N7469 JANTXVR, F, G AND H AND JANSR, F, G AND H

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Organization: NPFC
Publication Date: 27 November 2018
Status: active
Page Count: 29
scope:

This specification covers the performance requirements for an N-channel, enhancement-mode, MOSFET, radiation hardened (total dose and single event effects (SEE)), power transistor. Two levels of product assurance (JANTXV and JANS) are provided for each encapsulated device, with avalanche energy maximum rating (EAS) and maximum avalanche current (IAS). Provisions for radiation hardness assurance (RHA) to four radiation levels ("R", "F", "G" and "H") are provided for JANS and JANTXV product assurance levels.

intended Use:

Semiconductors conforming to this specification are intended for original equipment design applications and logistic support of existing equipment.

Document History

MIL-PRF-19500/673
November 27, 2018
TRANSISTOR, FIELD EFFECT, RADIATION HARDENED N-CHANNEL, SILICON, ENCAPSULATED (SURFACE MOUNT AND CARRIER BOARD PACKAGES), TYPES 2N7468 AND 2N7469 JANTXVR, F, G AND H AND JANSR, F, G AND H
This specification covers the performance requirements for an N-channel, enhancement-mode, MOSFET, radiation hardened (total dose and single event effects (SEE)), power transistor. Two levels of...
August 25, 2017
TRANSISTOR, FIELD EFFECT, RADIATION HARDENED N-CHANNEL, SILICON, ENCAPSULATED (SURFACE MOUNT AND CARRIER BOARD PACKAGES), TYPES 2N7468 AND 2N7469 JANTXVR, F, G AND H AND JANSR, F, G AND H
This specification covers the performance requirements for an N-channel, enhancement-mode, MOSFET, radiation hardened (total dose and single event effects (SEE)), power transistor. Two levels of...
May 26, 2016
TRANSISTOR, FIELD EFFECT, RADIATION HARDENED N-CHANNEL, SILICON, ENCAPSULATED (SURFACE MOUNT AND CARRIER BOARD PACKAGES), TYPES 2N7468 AND 2N7469 JANTXVR, F, G AND H AND JANSR, F, G AND H
This specification covers the performance requirements for an N-channel, enhancement-mode, MOSFET, radiation hardened (total dose and single event effects (SEE)), power transistor. Two levels of...
May 26, 2015
Semiconductor Device, Field Effect Radiation Hardened (Total Dose and Single Event Effects) Transistor, N-Channel, Silicon Types 2N7468U2 and 2N7469U2 JANTXVR, F, G and H and JANSR, F, G and H
A description is not available for this item.
August 19, 2010
SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTOR, N-CHANNEL, SILICON TYPES 2N7468U2 AND 2N7469U2 JANTXVR, F, G AND H AND JANSR, F, G AND H
This specification covers the performance requirements for an N-channel, enhancement-mode, MOSFET, radiation hardened (total dose and single event effects (SEE)), power transistor. Two levels of...
November 5, 2009
SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTOR, N-CHANNEL, SILICON TYPES 2N7468U2 AND 2N7469U2 JANTXVR, F, G AND H AND JANSR, F, G AND H
This specification covers the performance requirements for an N-channel, enhancement-mode, MOSFET, radiation hardened (total dose and single event effects (SEE)), power transistor. Two levels of...
January 14, 2005
SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTOR, N-CHANNEL, SILICON TYPES 2N7468U2 AND 2N7469U2 JANTXVR, F, G AND H AND JANSR, F, G AND H
This specification covers the performance requirements for an N-channel, enhancement-mode, MOSFET, radiation hardened (total dose and single event effects (SEE)), power transistor. Two levels of...
May 6, 2002
SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTOR, N-CHANNEL, SILICON TYPES 2N7468U2 AND 2N7469U2 JANTXVR, F, G, AND H, AND JANSR, F, G, AND H
A description is not available for this item.
August 20, 2001
SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTOR, N-CHANNEL, SILICON TYPES 2N7468U2 AND 2N7469U2 JANTXVR, F, G, AND H, AND JANSR, F, G, AND H
A description is not available for this item.
March 9, 2001
SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTOR, N-CHANNEL, SILICON TYPES 2N7468U2 AND 2N7469U2 JANTXVR, F, G AND H AND JANSR, F, G AND H
This specification covers the performance requirements for an N-channel, enhancement-mode, MOSFET, radiation hardened (total dose and single event effects (SEE)), power transistor. Four levels of...

References

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