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IEC 60311-3

Integrated circuits – Three dimensional integrated circuits – Part 3: Model and measurement conditions of through-silicon via

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Organization: IEC
Publication Date: 1 November 2018
Status: active
Page Count: 32
scope:

This part of IEC 63011 specifies a reference model of through-silicon via (TSV) electrical characteristics required for an interface design in three dimensional integrated circuit (3-D IC) to transmit and receive digital data and measurement conditions for resistance and capacitance to specify TSV characteristics in 3-D IC.

3-D IC specifications covered by this document are the following:

• application: digital consumer and mobile;

• operating voltage: 0,1 V to 5,0 V,

• operating frequency: less than 2,0 GHz.

This document does not describe the equipment for the measurement. Figure 1 describes a typical case of multi-chip interconnect system discussed in this document.

Power devices, RF devices and micro-electromechanical systems (MEMS) are not in the scope of this document

 

 

 

Document History

IEC 60311-3
November 1, 2018
Integrated circuits – Three dimensional integrated circuits – Part 3: Model and measurement conditions of through-silicon via
This part of IEC 63011 specifies a reference model of through-silicon via (TSV) electrical characteristics required for an interface design in three dimensional integrated circuit (3-D IC) to...

References

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