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DLA - DSCC-DWG-V62/18619

MICROCIRCUIT, LINEAR, DUAL, PRECISION, VERY LOW NOISE, LOW INPUT BIAS CURRENT, WIDE BANDWIDTH JFET OPERATIONAL AMPLIFIER, MONOLITHIC SILICON

inactive
Organization: DLA
Publication Date: 5 December 2018
Status: inactive
Page Count: 15
scope:

This drawing documents the general requirements of a high performance dual precision, very low noise, low input bias current, wide bandwidth junction field effect transistor (JFET) operational amplifier microcircuit, with an operating temperature range of -55°C to +125°C.

Document History

November 1, 2023
MICROCIRCUIT, LINEAR, DUAL, PRECISION, VERY LOW NOISE, LOW INPUT BIAS CURRENT, WIDE BANDWIDTH JFET OPERATIONAL AMPLIFIER, MONOLITHIC SILICON
A description is not available for this item.
DSCC-DWG-V62/18619
December 5, 2018
MICROCIRCUIT, LINEAR, DUAL, PRECISION, VERY LOW NOISE, LOW INPUT BIAS CURRENT, WIDE BANDWIDTH JFET OPERATIONAL AMPLIFIER, MONOLITHIC SILICON
This drawing documents the general requirements of a high performance dual precision, very low noise, low input bias current, wide bandwidth junction field effect transistor (JFET) operational...

References

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