IEC 63068-2
Semiconductor devices - Non-destructive recognition criteria of defects in silicon carbide homoepitaxial wafer for power devices - Part 2: Test method for defects using optical inspection
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| Organization: | IEC |
| Publication Date: | 1 January 2019 |
| Status: | active |
| Page Count: | 30 |
| ICS Code (Other semiconductor devices): | 31.080.99 |
scope:
This part of IEC 63068 provides definitions and guidance in use of optical inspection for detecting as-grown defects in commercially available 4H-SiC (Silicon Carbide) epitaxial wafers. Additionally, this document exemplifies optical images to enable the detection and categorization of the defects for SiC homoepitaxial wafers.
This document deals with a non-destructive test method for the defects so that destructive methods such as preferential etching are out of scope in this document.
Document History
IEC 63068-2
January 1, 2019
Semiconductor devices - Non-destructive recognition criteria of defects in silicon carbide homoepitaxial wafer for power devices - Part 2: Test method for defects using optical inspection
This part of IEC 63068 provides definitions and guidance in use of optical inspection for detecting as-grown defects in commercially available 4H-SiC (Silicon Carbide) epitaxial wafers. Additionally,...