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DOD - SMD 5962-12227

MICROCIRCUIT, MEMORY, DIGITAL, CMOS, 2 MEG X 8-BIT (16M), RADIATION-HARDENED, MAGNETORESISTIVE RAM (MRAM), MONOLITHIC SILICON

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Organization: DOD
Publication Date: 9 July 2019
Status: inactive
Page Count: 27
scope:

Scope.

This drawing documents two product assurance class levels consisting of high reliability (device class Q) and space application (device class V). A choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels are reflected in the PIN.

intended Use:

Microcircuits conforming to this drawing are intended for use for Government microcircuit applications (original equipment), design applications, and logistics purposes.

Document History

November 5, 2020
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, 2 MEG X 8-BIT (16M), RADIATION-HARDENED, MAGNETORESISTIVE RAM (MRAM), MONOLITHIC SILICON
Scope. This drawing documents two product assurance class levels consisting of high reliability (device class Q) and space application (device class V). A choice of case outlines and lead finishes...
April 10, 2020
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, 2 MEG X 8-BIT (16M), RADIATION-HARDENED, MAGNETORESISTIVE RAM (MRAM), MONOLITHIC SILICON
Scope. This drawing documents two product assurance class levels consisting of high reliability (device class Q) and space application (device class V). A choice of case outlines and lead finishes...
SMD 5962-12227
July 9, 2019
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, 2 MEG X 8-BIT (16M), RADIATION-HARDENED, MAGNETORESISTIVE RAM (MRAM), MONOLITHIC SILICON
Scope. This drawing documents two product assurance class levels consisting of high reliability (device class Q) and space application (device class V). A choice of case outlines and lead finishes...
January 16, 2019
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, 2 MEG X 8-BIT (16M), RADIATION-HARDENED, MAGNETORESISTIVE RAM (MRAM), MONOLITHIC SILICON
This drawing documents two product assurance class levels consisting of high reliability (device class Q) and space application (device class V). A choice of case outlines and lead finishes are...
January 20, 2017
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, 2 MEG X 8-BIT (16M), RADIATION-HARDENED, MAGNETORESISTIVE RAM (MRAM), MONOLITHIC SILICON
This drawing documents two product assurance class levels consisting of high reliability (device class Q) and space application (device class V). A choice of case outlines and lead finishes are...
December 16, 2015
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, 2 MEG X 8-BIT (16M), RADIATION-HARDENED, MAGNETORESISTIVE RAM (MRAM), MONOLITHIC SILICON
This drawing documents two product assurance class levels consisting of high reliability (device class Q) and space application (device class V). A choice of case outlines and lead finishes are...
October 3, 2014
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, 2 MEG X 8-BIT (16M), RADIATION-HARDENED, MAGNETORESISTIVE RAM (MRAM), MONOLITHIC SILICON
This drawing documents two product assurance class levels consisting of high reliability (device class Q) and space application (device class V). A choice of case outlines and lead finishes are...
March 14, 2014
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, 2 MEG X 8-BIT (16M), RADIATION-HARDENED, MAGNETORESISTIVE RAM (MRAM), MONOLITHIC SILICON
This drawing documents two product assurance class levels consisting of high reliability (device class Q) and space application (device class V). A choice of case outlines and lead finishes are...
March 14, 2014
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, 2 MEG X 8-BIT (16M), RADIATION-HARDENED, MAGNETORESISTIVE RAM (MRAM), MONOLITHIC SILICON
This drawing documents two product assurance class levels consisting of high reliability (device class Q) and space application (device class V). A choice of case outlines and lead finishes are...
January 16, 2014
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, 2 MEG X 8-BIT (16M), RADIATION-HARDENED, MAGNETORESISTIVE RAM (MRAM), MONOLITHIC SILICON
This drawing documents two product assurance class levels consisting of high reliability (device class Q) and space application (device class V). A choice of case outlines and lead finishes are...

References

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