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DLA - SMD-5962-88690

MICROCIRCUIT, MEMORY, DIGITAL, CMOS, 512 X 8 PROM, MONOLITHIC SILICON

inactive
Organization: DLA
Publication Date: 20 January 1989
Status: inactive
Page Count: 14
scope:

This drawing describes device requirements for class B microcircuits in accordance with 1.2.1 of MIL-STD-883, "Provisions for the use of MIL-STD-883 in conjunction with compliant non-JAN devices".

The complete part number shall be as shown in the following example:

The device types shall identify the circuit function as follows:

Device type Generic number Circuit function Access time 01 (See 6.4) 512 × 8 CMOS PROM 220 ns 02 (See 6.4) 512 × 8 CMOS PROM 140 ns

The case outlines shall be as designated in appendix C of MIL-M-38510, and as follows:

Outline letter Case outline J D-3 (24-lead, 1.290" × .610" × .225"), dual-in-line package L D-9 (24-lead, 1.280" × .310" × .200"), dual-in-line package 3 C-4 (28-terminal, .460" × .460" × .100"), square chip carrier package

Supply voltage to ground potential - - - - - - - - - - - −0.3 V dc to +7.0 V dc DC voltage applied to outputs - - - - - - - - - - - - - - −0.3 V dc to VCC +0.3 V dc DC input voltage range- - - - - - - - - - - - - - - - - - −0.3 V dc to VCC +0.3 V dc Storage temperature range - - - - - - - - - - - - - - - - −65°C to +150°C Maximum power dissipation (PD)- - - - - - - - - - - - - - 1.0 W Lead temperature (soldering, 10 seconds)- - - - - - - - - +275°C Thermal resistance, junction-to-case (θJC): Cases J, L, and 3 - - - - - - - - - - - - - - - - - - - See MIL-M-38510, appendix C Junction temperature (TJ) - - - - - - - - - - - - - - - - +150°C 1/

Supply voltage range (VCC) - - - - - - - - - - - - - - - 4.5 V dc to 5.5 V dc High level input voltage range (VIH) - - - - - - - - - - +2.4 V dc to VCC +0.3 V dc Low level input voltage range (VIL) - - - - - - - - - - - −0.3 V dc to +0.8 V dc Case operating temperature range (TC) - - - - - - - - - - −55°C to +125°C

intended Use:

Microcircuits conforming to this drawing are intended for use when military specifications do not exist and qualified military devices that will perform the required function are not available for... View More

Document History

May 2, 2016
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, 512 X 8 PROM, MONOLITHIC SILICON
Microcircuits conforming to this drawing are intended for use for Government microcircuit applications (original equipment), design applications, and logistics purposes.
December 13, 2007
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, 512 X 8 PROM, MONOLITHIC SILICON
Microcircuits conforming to this drawing are intended for use for Government microcircuit applications (original equipment), design applications, and logistics purposes.
October 5, 2000
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, 512 X 8 PROM, MONOLITHIC SILICON
Microcircuits conforming to this drawing are intended for use for Government microcircuit applications (original equipment), design applications, and logistics purposes.
SMD-5962-88690
January 20, 1989
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, 512 X 8 PROM, MONOLITHIC SILICON
This drawing describes device requirements for class B microcircuits in accordance with 1.2.1 of MIL-STD-883, "Provisions for the use of MIL-STD-883 in conjunction with compliant non-JAN devices"....

References

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