NPFC - MIL-PRF-19500/632
TRANSISTOR, FIELD EFFECT, N-CHANNEL SILICON, RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS), TYPES 2N7399, 2N7400, 2N7401, AND 2N7402, FLANGE MOUNT PACKAGE, QUALITY LEVELS JANSD AND JANSR
active, Most Current
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| Organization: | NPFC |
| Publication Date: | 27 October 2019 |
| Status: | active |
| Page Count: | 23 |
scope:
Scope.
This specification covers the performance requirements for an N-channel, enhancement-mode, MOSFET, radiation hardened (total dose and single event characterization only), power transistor. One level of product assurance (JANS) is provided for each device type as specified in MIL-PRF-19500.
intended Use:
Semiconductors conforming to this specification are intended for original equipment design applications and logistic support of existing equipment.
Document History
MIL-PRF-19500/632
October 27, 2019
TRANSISTOR, FIELD EFFECT, N-CHANNEL SILICON, RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS), TYPES 2N7399, 2N7400, 2N7401, AND 2N7402, FLANGE MOUNT PACKAGE, QUALITY LEVELS JANSD AND JANSR
Scope.
This specification covers the performance requirements for an N-channel, enhancement-mode, MOSFET, radiation hardened (total dose and single event characterization only), power transistor....
February 26, 2019
Semiconductor Device, Field Effect Radiation Hardened Transistors, N-Channel Silicon, Types 2N7399, 2N7400, 2N7401, and 2N7402, JANSD and R
A description is not available for this item.
May 2, 2014
SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED TRANSISTORS, N-CHANNEL SILICON, TYPES 2N7399, 2N7400, 2N7401, AND 2N7402, JANSD AND R
This specification covers the performance requirements for an N-channel, enhancement-mode, MOSFET, radiation hardened (total dose and single event characterization), power transistor. One level of...
July 15, 2011
Semiconductor Device, Field Effect Radiation Hardened (Total Dose and Single Event Effects) Transistors, N-Channel Silicon Types 2N7399, 2N7400, 2N7401, and 2N7402, JANSD and JANSR
This specification covers the performance requirements for an N-channel, enhancement-mode, MOSFET, radiation hardened (total dose and single event characterization), power transistor. One level of...
March 16, 2004
SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTORS, N-CHANNEL SILICON, TYPES 2N7399, 2N7400, 2N7401, AND 2N7402, JANSD AND JANSR
This specification covers the performance requirements for an N-channel, enhancement-mode, MOSFET, radiation hardened (total dose and single event characterization), power transistor. One level of...
February 6, 2003
SEMICONDUCTOR DEVICE, TRANSISTOR, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS), N-CHANNEL SILICON TYPES 2N7399, 2N7400, 2N7401, AND 2N7402 JANSD AND JANSR
A description is not available for this item.
March 31, 1998
SEMICONDUCTOR DEVICE, TRANSISTOR, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS), N-CHANNEL SILICON TYPES 2N7399, 2N7400, 2N7401, AND 2N7402, JANSD AND JANSR
This specification covers the performance requirements for an N-Channel, enhancement-mode, MOSFET, radiation hardened (Total Dose and Single Event characterization - see figure 4), power transistor....
November 29, 1996
SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTORS, N-CHANNEL SILICON, TYPES 2N7399, 2N7400, 2N7401, AND 2N7402 JANTXD, -R, JANTXVD, -R, AND JANSD, -R
This specification covers the performance requirements for an N-Channel, enhancement-mode, MOSFET, radiation hardened (Total Dose and Single Event characterization - see figure 4), power transistor...