NPFC - MIL-PRF-19500/632
SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTORS, N-CHANNEL SILICON, TYPES 2N7399, 2N7400, 2N7401, AND 2N7402 JANTXD, -R, JANTXVD, -R, AND JANSD, -R
| Organization: | NPFC |
| Publication Date: | 29 November 1996 |
| Status: | inactive |
| Page Count: | 29 |
scope:
This specification covers the performance requirements for an N-Channel, enhancement-mode, MOSFET, radiation hardened (Total Dose and Single Event characterization - see figure 4), power transistor intended for use in high density power switching applications. Three levels of product assurance are provided for each device type as specified in MIL-PRF-19500.
See figure 1, T0-257AA.
TA = +25°C, unless otherwise specified.
Beneficial comments (recommendations, additions, deletions) and any pertinent data which may be of use in improving this document should be addressed to: Commander, Defense Supply Center Columbus, ATTN: DSCC-VAT, 3990 East Broad St., Columbus, OH 43216-5000, by using the addressed Standardization Document Improvement Proposal (DD Form 1426) appearing at the end of this document or by letter.
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