IEC 63068-3
Semiconductor devices – Non-destructive recognition criteria of defects in silicon carbide homoepitaxial wafer for power devices – Part 3: Test method for defects using photoluminescence
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| Organization: | IEC |
| Publication Date: | 1 July 2020 |
| Status: | active |
| Page Count: | 56 |
| ICS Code (Other semiconductor devices): | 31.080.99 |
scope:
This part of IEC 63068 provides definitions and guidance in use of photoluminescence for detecting as-grown defects in commercially available 4H-SiC (Silicon Carbide) epitaxial wafers. Additionally, this document exemplifies photoluminescence images and emission spectra to enable the detection and categorization of the defects in SiC homoepitaxial wafers.
Document History
IEC 63068-3
July 1, 2020
Semiconductor devices – Non-destructive recognition criteria of defects in silicon carbide homoepitaxial wafer for power devices – Part 3: Test method for defects using photoluminescence
This part of IEC 63068 provides definitions and guidance in use of photoluminescence for detecting as-grown defects in commercially available 4H-SiC (Silicon Carbide) epitaxial wafers. Additionally,...