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NPFC - MIL-PRF-19500/569

TRANSISTOR, FIELD EFFECT, N-CHANNEL, SILICON, CASE MOUNT THROUGH-HOLE MOUNT PACKAGE, TYPES 2N6966, 2N6967, 2N6968, 2N6969, QUALITY LEVELS JAN, JANTX, JANTXV, AND JANS

active, Most Current
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Organization: NPFC
Publication Date: 6 October 2020
Status: active
Page Count: 20
scope:

Scope.

This specification covers the performance requirements for N-channel, enhancement-mode, MOSFET, power transistor intended for use in high density power switching applications. Four levels of product assurance (JAN, JANTX, JANTXV, and JANS) are provided for each encapsulated device type.

intended Use:

Semiconductors conforming to this specification are intended for original equipment design applications and logistic support of existing equipment.

Document History

MIL-PRF-19500/569
October 6, 2020
TRANSISTOR, FIELD EFFECT, N-CHANNEL, SILICON, CASE MOUNT THROUGH-HOLE MOUNT PACKAGE, TYPES 2N6966, 2N6967, 2N6968, 2N6969, QUALITY LEVELS JAN, JANTX, JANTXV, AND JANS
Scope. This specification covers the performance requirements for N-channel, enhancement-mode, MOSFET, power transistor intended for use in high density power switching applications. Four levels of...
August 19, 2015
TRANSISTOR, FIELD EFFECT, N-CHANNEL, SILICON, TYPES 2N6966, 2N6967, 2N6968, 2N6969, JAN, JANTX, JANTXV, AND JANS
Semiconductors conforming to this specification are intended for original equipment design applications and logistic support of existing equipment. a. Title, number, and date of this specification....
July 13, 2011
Semiconductor Device, Field Effect Transistors, N-Channel, Silicon Types 2N6966, 2N6967, 2N6968, and 2N6969 JANTX, JANTXV, and JANS
A description is not available for this item.
March 24, 2004
SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTORS, N-CHANNEL, SILICON TYPES 2N6966, 2N6967, 2N6968, AND 2N6969 JANTX, JANTXV, AND JANS
A description is not available for this item.
June 7, 1999
SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTORS, N-CHANNEL, SILICON TYPES 2N6966, 2N6967, 2N6968, AND 2N6969 JANTX, JANTXV, AND JANS
A description is not available for this item.
June 12, 1992
SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTORS, N-CHANNEL, SILICON TYPES 2N6966, 2N6967, 2N6968, AND 2N6969 JANTX, JANTXV, AND JANS
A description is not available for this item.
September 8, 1989
SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTORS, N-CHANNEL, SILICON TYPES 2N6966, 2N6967, 2N6968, AND 2N6969 JANTX, JANTXV, AND JANS
A description is not available for this item.
July 1, 1988
SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTORS, N-CHANNEL, SILICON TYPES 2N6966, 2N6967, 2N6968, AND 2N6969 JANTX, JANTXV, AND JANS
A description is not available for this item.
September 15, 1987
SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTORS, N-CHANNEL, SILICON TYPES 2N6966, 2N6967, 2N6968, AND 2N6969 JANTX, JANTXV, AND JANS
This specification covers the detail requirements for an N-Channel, enhancement-mode, MOSFET, power transistor intended for use in high density power switching applications. Three levels of product...

References

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