NPFC - MIL-S-19500/569
SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTORS, N-CHANNEL, SILICON TYPES 2N6966, 2N6967, 2N6968, AND 2N6969 JANTX, JANTXV, AND JANS
active, Most Current
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| Organization: | NPFC |
| Publication Date: | 15 September 1987 |
| Status: | active |
| Page Count: | 22 |
scope:
This specification covers the detail requirements for an N-Channel, enhancement-mode, MOSFET, power transistor intended for use in high density power switching applications. Three levels of product assurance are provided for each device type as specified in MIL-S-19500.
See figure 1. TO-213AA. (formerly T066)
Beneficial comments (recommendations, additions, deletions) and any pertinent data which may be of use in improving this document should be addressed to: Commander, Space and Naval Warfare Systems, ATTN: Code 8111, Washington Dc 20363, by using the self-addressed Standardization Document Improvement Proposal (DD Form 1426) appearing at the end of this document or by letter.
Document History
October 6, 2020
TRANSISTOR, FIELD EFFECT, N-CHANNEL, SILICON, CASE MOUNT THROUGH-HOLE MOUNT PACKAGE, TYPES 2N6966, 2N6967, 2N6968, 2N6969, QUALITY LEVELS JAN, JANTX, JANTXV, AND JANS
Scope.
This specification covers the performance requirements for N-channel, enhancement-mode, MOSFET, power transistor intended for use in high density power switching applications. Four levels of...
August 19, 2015
TRANSISTOR, FIELD EFFECT, N-CHANNEL, SILICON, TYPES 2N6966, 2N6967, 2N6968, 2N6969, JAN, JANTX, JANTXV, AND JANS
Semiconductors conforming to this specification are intended for original equipment design applications and logistic support of existing equipment.
a. Title, number, and date of this specification....
July 13, 2011
Semiconductor Device, Field Effect Transistors, N-Channel, Silicon Types 2N6966, 2N6967, 2N6968, and 2N6969 JANTX, JANTXV, and JANS
A description is not available for this item.
March 24, 2004
SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTORS, N-CHANNEL, SILICON TYPES 2N6966, 2N6967, 2N6968, AND 2N6969 JANTX, JANTXV, AND JANS
A description is not available for this item.
June 7, 1999
SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTORS, N-CHANNEL, SILICON TYPES 2N6966, 2N6967, 2N6968, AND 2N6969 JANTX, JANTXV, AND JANS
A description is not available for this item.
June 12, 1992
SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTORS, N-CHANNEL, SILICON TYPES 2N6966, 2N6967, 2N6968, AND 2N6969 JANTX, JANTXV, AND JANS
A description is not available for this item.
September 8, 1989
SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTORS, N-CHANNEL, SILICON TYPES 2N6966, 2N6967, 2N6968, AND 2N6969 JANTX, JANTXV, AND JANS
A description is not available for this item.
July 1, 1988
SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTORS, N-CHANNEL, SILICON TYPES 2N6966, 2N6967, 2N6968, AND 2N6969 JANTX, JANTXV, AND JANS
A description is not available for this item.
MIL-S-19500/569
September 15, 1987
SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTORS, N-CHANNEL, SILICON TYPES 2N6966, 2N6967, 2N6968, AND 2N6969 JANTX, JANTXV, AND JANS
This specification covers the detail requirements for an N-Channel, enhancement-mode, MOSFET, power transistor intended for use in high density power switching applications. Three levels of product...