DLA - MIL-S-19500/438 VALID NOTICE 5
Semiconductor Device, Triode Thyristor (Bi-Directional), Silicon, Types 2N5806 Through 2N5809
active, Most Current
| Organization: | DLA |
| Publication Date: | 3 May 2021 |
| Status: | active |
| Page Count: | 1 |
Document History
MIL-S-19500/438 VALID NOTICE 5
May 3, 2021
Semiconductor Device, Triode Thyristor (Bi-Directional), Silicon, Types 2N5806 Through 2N5809
A description is not available for this item.
July 12, 2011
Semiconductor Device, Triode Thyristor (Bi-Directional), Silicon, Types 2N5806 Through 2N5809
A description is not available for this item.
March 24, 2004
SEMICONDUCTOR DEVICE, TRIODE THYRISTOR (BI-DIRECTIONAL), SILICON, TYPES 2N5806 THROUGH 2N5809
A description is not available for this item.
June 7, 1999
SEMICONDUCTOR DEVICE, TRIODE THYRISTOR (BI-DIRECTIONAL), SILICON, TYPES 2N5806 THROUGH 2N5809
A description is not available for this item.
August 24, 1988
SEMICONDUCTOR DEVICE, TRIODE THYRISTOR (BI-DIRECTIONAL), SILICON, TYPES 2N5806 THROUGH 2N5809
A description is not available for this item.
January 15, 1976
SEMICONDUCTOR DEVICE, TRIODE THYRISTOR (BI-DIRECTIONAL), SILICON, TYPES 2N5806 THROUGH 2N5809
A description is not available for this item.
August 20, 1970
SEMICONDUCTOR DEVICE, TRIODE THYRISTOR (BI-DIRECTIONAL), SILICON, TYPES 2N5806 THROUGH 2N5809
This specification covers the detail requirements for silicon bi-directional triode thyristors (see 3.2.1) for use at frequencies up to 400 Hz, and shall be in accordance with MIL-S-19500 except as...