NPFC - MIL-PRF-19500/438
SEMICONDUCTOR DEVICE, TRIODE THYRISTOR (BI-DIRECTIONAL), SILICON, TYPES 2N5806 THROUGH 2N5809
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| Organization: | NPFC |
| Publication Date: | 7 June 1999 |
| Status: | inactive |
| Page Count: | 1 |
Document History
May 3, 2021
Semiconductor Device, Triode Thyristor (Bi-Directional), Silicon, Types 2N5806 Through 2N5809
A description is not available for this item.
July 12, 2011
Semiconductor Device, Triode Thyristor (Bi-Directional), Silicon, Types 2N5806 Through 2N5809
A description is not available for this item.
March 24, 2004
SEMICONDUCTOR DEVICE, TRIODE THYRISTOR (BI-DIRECTIONAL), SILICON, TYPES 2N5806 THROUGH 2N5809
A description is not available for this item.
MIL-PRF-19500/438
June 7, 1999
SEMICONDUCTOR DEVICE, TRIODE THYRISTOR (BI-DIRECTIONAL), SILICON, TYPES 2N5806 THROUGH 2N5809
A description is not available for this item.
August 24, 1988
SEMICONDUCTOR DEVICE, TRIODE THYRISTOR (BI-DIRECTIONAL), SILICON, TYPES 2N5806 THROUGH 2N5809
A description is not available for this item.
January 15, 1976
SEMICONDUCTOR DEVICE, TRIODE THYRISTOR (BI-DIRECTIONAL), SILICON, TYPES 2N5806 THROUGH 2N5809
A description is not available for this item.
August 20, 1970
SEMICONDUCTOR DEVICE, TRIODE THYRISTOR (BI-DIRECTIONAL), SILICON, TYPES 2N5806 THROUGH 2N5809
This specification covers the detail requirements for silicon bi-directional triode thyristors (see 3.2.1) for use at frequencies up to 400 Hz, and shall be in accordance with MIL-S-19500 except as...