DLA - MIL-S-19500/292
SEMICONDUCTOR DEVICE, FIELD-EFFECT TRANSISTOR, P-CHANNEL, SILICON TYPE 2N2606
inactive
| Organization: | DLA |
| Publication Date: | 14 August 1964 |
| Status: | inactive |
| Page Count: | 13 |
Document History
October 12, 1995
SEMICONDUCTOR DEVICE, FIELD-EFFECT TRANSISTOR, P-CHANNEL, SILICON TYPE 2N2606
A description is not available for this item.
May 21, 1970
SEMICONDUCTOR DEVICE, FIELD-EFFECT TRANSISTOR, P-CHANNEL, SILICON TYPE 2N2606
This specification covers the detail requirements for a P-channel, junction, silicon, field-effect transistor.
See figure 1 (TO-18).
March 14, 1966
SEMICONDUCTOR DEVICE, FIELD-EFFECT TRANSISTOR, P-CHANNEL, SILICON TYPE 2N2606
A description is not available for this item.
December 10, 1964
SEMICONDUCTOR DEVICE, FIELD-EFFECT TRANSISTOR, P-CHANNEL, SILICON TYPE 2N2606
A description is not available for this item.
MIL-S-19500/292
August 14, 1964
SEMICONDUCTOR DEVICE, FIELD-EFFECT TRANSISTOR, P-CHANNEL, SILICON TYPE 2N2606
A description is not available for this item.